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Method of forming silicon-on-insulator (SOI) semiconductor substrate and soi semiconductor substrate formed thereby

a technology of silicon-on-insulator and semiconductor substrate, which is applied in the direction of semiconductor devices, electrical appliances, basic electric elements, etc., can solve problems such as current leakage and become a serious problem

Inactive Publication Date: 2007-05-24
LEE JUNG IL +4
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The diffusion barrier layer effectively prevents impurities from diffusing into the buried oxide or handle substrate, thereby improving transistor characteristics by maintaining impurity concentration and threshold voltage stability.

Problems solved by technology

For this reason, current leakage, current leaked into the semiconductor substrate through the source / drain region, can become a serious problem.

Method used

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  • Method of forming silicon-on-insulator (SOI) semiconductor substrate and soi semiconductor substrate formed thereby
  • Method of forming silicon-on-insulator (SOI) semiconductor substrate and soi semiconductor substrate formed thereby
  • Method of forming silicon-on-insulator (SOI) semiconductor substrate and soi semiconductor substrate formed thereby

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Embodiment Construction

[0023] The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. The invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thickness of layers and regions are exaggerated for clarity. It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Like numbers refer to like elements throughout.

[0024]FIGS. 3 through 6 are cross-sectional views showing a method of forming an SOI semiconductor substrate according to a preferred embodiment of the present invention.

[0025] Referri...

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Abstract

A silicon-on-insulator (SOI) semiconductor substrate includes a semiconductor substrate, a buried oxide layer formed on the semiconductor substrates an SOI layer formed on the buried oxide layer, and a diffusion barrier layer interposed between the buried oxide layer and the SOI layer, wherein the diffusion barrier layer is an insulating layer having a lower impurity diffusion coefficient as compared with the buried oxide layer.

Description

CROSS-REFERENCE TO RELATED PATENT APPLICATIONS [0001] This application is a divisional of U.S. patent application Ser. No. 10 / 397,447, filed on Mar. 26, 2003, which claims priority to Korean Patent Application No. 2002-28480, filed on May 22, 2002, the disclosures of which are herein incorporated by reference in their entirety.FIELD OF THE INVENTION [0002] The present invention relates to a method of forming a semiconductor device and the semiconductor device formed thereby, more particularly, a method of forming an SOI semiconductor substrate and the SOI semiconductor substrate formed thereby. BACKGROUND OF THE INVENTION [0003] A typical transistor has a source / drain region, which is defined by forming an impurity diffusion layer at a semiconductor substrate. A PN junction is formed between the source / drain region and the semiconductor substrate. Accordingly, the semiconductor substrate and the source / drain region are electrically isolated from each other when a reverse bias is app...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/8238H01L27/12H01L21/02H01L21/76H01L21/762
CPCH01L21/76254H01L21/76259H01L27/12
Inventor LEE, JUNG-ILBAE, GEUM-JONGKIM, KI-CHULRHEE, HWA-SUNGKIM, SANG-SU
Owner LEE JUNG IL