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Mechano-chemical polishing method for GaAs wafer

a technology of chemical polishing and gaas, which is applied in the direction of manufacturing tools, lapping machines, abrasive surface conditioning devices, etc., can solve the problems of chemical polishing as the secondary polishing cannot achieve the desired flatness and mirror-like smoothness, and the flatness and smoothness of the wafer tends to be relatively deteriorated, so as to ensure the flatness and smoothness of the gaas wafer and increase the polishing rate

Inactive Publication Date: 2008-08-14
SUMITOMO ELECTRIC IND LTD
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AI Technical Summary

Benefits of technology

The present invention aims to improve the polishing rate and ensure smoothness of a GaAs wafer during mechano-chemical polishing as the primary polishing process. Thereafter, a chemical polishing process is used to finish the wafer and achieve a mirror-like surface.

Problems solved by technology

The technical problem addressed in this patent is to increase the production efficiency and reduce the cost of polishing GaAs wafers used for semiconductor devices, particularly in the field of radio communication, by increasing the rate of primary polishing without compromising prescribed flatness and smoothness of the wafer. This is because the primary polishing, which uses abrasive grains and chemical polishing solution, is required to have a higher polishing rate than the secondary polishing, which only utilizes chemical polishing solution without abrasive grains. However, increasing the rate of primary polishing can cause the wafer surface to become roughened, making it difficult to achieve a mirror-like surface in the secondary polishing.

Method used

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  • Mechano-chemical polishing method for GaAs wafer
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Embodiment Construction

[0020]As described previously, it is known that polishing solution containing dichloroisocyanuric acid, sodium tripolyphosphate, sodium sulfate, sodium carbonate, and colloidal silica as components except for water is usable for the mechano-chemical polishing as the primary polishing for the GaAs wafer, (e.g., see Japanese Patent Laying-Open No. 2005-264057 and Japanese Patent-Laying-Open No. 11-283943).

[0021]As to such mechano-chemical polishing solution, the polishing rate of the GaAs wafer and also the flatness and smoothness of the polished wafer are of course significantly influenced depending on the ratios of the components except for water.

[0022]Accordingly, the present inventors variously changed the component ratios except for water in the mechano-chemical polishing as the primary polishing that utilizes the polishing solution containing dichloroisocyanuric acid, sodium tripolyphosphate, sodium sulfate, sodium carbonate, and colloidal silica as components except for water, ...

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Abstract

A method of performing mechano-chemical polishing serving as a primary polishing operation for a GaAs wafer, by using a mechano-chemical polishing solution containing dichloroisocyanuric acid, sodium tripolyphosphate, sodium sulfate, sodium carbonate, and colloidal silica as components except for water, includes the steps of: mounting the wafer on a mechano-chemical polishing apparatus; performing first-stage polishing by supplying the polishing apparatus with the polishing solution having a first composition in which 20-31 mass % of sodium tripolyphosphate is contained in the components except for water; and subsequently performing second-stage polishing by supplying the polishing apparatus with the polishing solution having a second composition in which 13-19 mass % of sodium tripolyphosphate is contained in the components except for water.

Description

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Claims

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Application Information

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Owner SUMITOMO ELECTRIC IND LTD
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