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Ultralow dielectric constant layer with controlled biaxial stress

a dielectric constant and controllable technology, applied in plasma technology, transportation and packaging, energy-based chemical/physical/physico-chemical processes, etc., can solve the problems of increasing signal delay in ulsi electronic devices, tendency to crack, etc., to reduce the biaxial stress, control the biaxial stress, the effect of low and controllable biaxial stress

Inactive Publication Date: 2008-11-20
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The method effectively reduces biaxial stress in ultralow k dielectric layers, minimizing cracking and improving the thermal stability and electrical properties of the films, thereby enhancing the performance of ULSI circuits by maintaining low dielectric constant and reducing signal delays.

Problems solved by technology

This combined effect increases signal delays in ULSI electronic devices.
One of the problems encountered when these materials are integrated into BEOL interconnect wiring structures is that they have the tendency to crack, especially in high humidity environments.

Method used

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  • Ultralow dielectric constant layer with controlled biaxial stress
  • Ultralow dielectric constant layer with controlled biaxial stress
  • Ultralow dielectric constant layer with controlled biaxial stress

Examples

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example 1

[0059]In this example, two types of SiCOH films were deposited on Si wafers. The first type of SiCOH film was an ultra-low k dielectric film deposited by means of PECVD, and which in as-deposited state contained a matrix based on the precursor diethoxymethylsilane (DEMS) and an organic phase that can later be removed by means of an energy source to stabilize the film and improve its properties (electrical, mechanical, adhesive), resulting in a final optimum film. Suitable energy sources include thermal, chemical, ultraviolet (UV) light, EB, RF, microwave, and plasma. Combinations of the aforementioned energy sources can also be used in the present invention. Within the present invention, the ambient for thermal, UV, EB, laser, or RF treatment is done in an environment comprising an inert gas such as N2, H2, Ar, He, Xe, or other noble gas or a hydrocarbon gas or a mixture thereof and containing a concentration of O2 in the range from 0 to 10 ppm.

[0060]The second type of SiCOH film wa...

example 2

[0111]In this example, a specific composition of an ultra-low k SiCOH film was deposited on Si wafers by means of PECVD. In the as-deposited state these SiCOH films contained a matrix based on the precursor DEMS and an organic phase that was later removed by means of UV light exposure at elevated temperature to stabilize the SiCOH film and improve its properties (electrical, mechanical, adhesive), resulting in a final optimum SiCOH film on the Si wafers.

[0112]The SiCOH film on respective Si wafers were UV cured, treated or annealed in three different gas environments. The three different gas environments were: a noble gas such as He or Ar, He mixed with H2, and O2. For the UV treatments, the substrate temperature was maintained for 20 minutes at 400° C. during the treatment, and the same UV lamp was used for the UV treatments.

[0113]FIG. 13, shows the biaxial stress of a SiCOH film on a Si wafer after UV treatment. In FIG. 13, the ordinate represents biaxial stress and the abscissa r...

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Abstract

A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.

Description

RELATED APPLICATIONS[0001]This application is a divisional of U.S. patent application Ser. No. 11 / 034,479, filed Jan. 13, 2005.FIELD OF THE INVENTION[0002]The present invention generally relates to a method for controlling the level of biaxial stress in a dielectric layer that has a low or ultralow dielectric constant (low k or ultralow k) and a tool design that enables fabrication of such dielectric layers and electronic devices containing such dielectric layers. More particularly, the present invention relates to a method for fabricating low stress ultralow k films for use as an intralevel or interlevel dielectric in an ultra-large-scale integration (“ULSI”) back-end-of-the-line (“BEOL”) wiring structure and an electronic structure formed by such a method.BACKGROUND OF THE INVENTION[0003]The continuous shrinking in dimensions of electronic devices utilized in ULSI circuits in recent years has resulted in increasing the resistance of the BEOL metallization. The wiring capacitance i...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B01J19/08C23C16/44
CPCC23C16/30C23C16/56H01L21/02126H01L21/02203H01L21/02274H01L21/02282H01L21/02348H01L21/3105H01L21/31058H01L21/31633H01L21/76801H01L21/76825H01L21/76828H01L21/76829H01L21/76832H01L21/76834Y10T428/249953Y10T428/249979Y10T428/249969H01L21/02216
Inventor DIMITRAKOPOULOS, CHRISTOS DIMITRIOSGATES, STEPHEN MCCONNELLGRILL, ALFREDLANE, MICHAEL WAYNELINIGER, ERIC GERHARDLIU, XIAO HUNGUYEN, SON VANNEUMAYER, DEBORAH ANNSHAW, THOMAS MCCARROLL
Owner GLOBALFOUNDRIES INC