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Method to form a photovoltaic cell comprising a thin lamina

a photovoltaic cell and lamina technology, applied in the field of photovoltaic cell thin lamina, can solve the problems of large amount of silicon waste in cutting loss, kerf, and large portion of the cost of conventional solar cells in silicon feedstock

Inactive Publication Date: 2009-08-06
GTAT CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0019]Another embodiment of the invention provides for a method for forming a photovoltaic cell, the method comprising: depositing a first layer of a first material on a first surface of a silicon wafer; implanting one or more species of gas ions through the first surface to define a cleave pla

Problems solved by technology

Current technology does not allow wafers of less than about 170 microns thick to be fabricated into cells economically, and at this thickness a substantial amount of silicon is wasted in cutting loss, or kerf.
A large portion of the cost of conventional solar cells is the cost of silicon feedstock.

Method used

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  • Method to form a photovoltaic cell comprising a thin lamina
  • Method to form a photovoltaic cell comprising a thin lamina
  • Method to form a photovoltaic cell comprising a thin lamina

Examples

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Embodiment Construction

[0005]The present invention is defined by the following claims, and nothing in this section should be taken as a limitation on those claims. In general, the invention is directed to a thin semiconductor lamina for use in a photovoltaic cell and methods for making such a cell.

[0006]A first aspect of the invention provides for a method for forming a photovoltaic cell, the method comprising: providing a contiguous, monolithic semiconductor donor body having a first donor thickness; and cleaving a portion of the contiguous, monolithic semiconductor donor body to form a first lamina of semiconductor material, wherein the first lamina of semiconductor material has a first lamina thickness, the first lamina thickness between about 0.2 micron and about 100 microns thick; and fabricating the photovoltaic cell, wherein the first lamina of semiconductor material comprises at least a portion of the base or of the emitter, or both, of the photovoltaic cell.

[0007]Another aspect of the invention p...

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Abstract

A very thin photovoltaic cell is formed by implanting gas ions below the surface of a donor body such as a semiconductor wafer. Ion implantation defines a cleave plane, and a subsequent step exfoliates a thin lamina from the wafer at the cleave plane. A photovoltaic cell, or all or a portion of the base or emitter of a photovoltaic cell, is formed within the lamina. In preferred embodiments, the wafer is affixed to a receiver before the cleaving step. Electrical contact can be formed to both surfaces of the lamina, or to one surface only.

Description

RELATED APPLICATION[0001]This is a continuation of U.S. patent application Ser. No. 12 / 026,530, filed Feb. 5, 2008, which is incorporated herewith in its entirety.BACKGROUND OF THE INVENTION[0002]The invention relates to a method to form a thin semiconductor lamina for use in a photovoltaic cell.[0003]Conventional photovoltaic cells are most commonly formed from silicon wafers. Typically such wafers are sliced from an ingot of silicon. Current technology does not allow wafers of less than about 170 microns thick to be fabricated into cells economically, and at this thickness a substantial amount of silicon is wasted in cutting loss, or kerf. Silicon solar cells need not be this thick to be effective or commercially useful. A large portion of the cost of conventional solar cells is the cost of silicon feedstock.[0004]There is a need, therefore, for a method to form a thinner crystalline semiconductor photovoltaic cell cheaply and reliably.SUMMARY OF THE PREFERRED EMBODIMENTS[0005]The...

Claims

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Application Information

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IPC IPC(8): H01L21/00
CPCH01L31/022425Y02E10/547H01L31/03685H01L31/03762H01L31/061H01L31/0745H01L31/1804H01L31/1808H01L31/1816H01L31/1836H01L31/1852H01L31/1896Y02E10/544Y02E10/548Y02E10/545Y02E10/546H01L31/03682H01L31/0747H01L31/1892H01L31/0682Y02P70/50
Inventor SIVARAM, SRINIVASANAGARWAL, ADITYAHERNER, S. BRADPETTI, CHRISTOPHER J.
Owner GTAT CORPORATION