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Light emitting device and method for manufacturing the same

a technology manufacturing methods, which is applied in the direction of semiconductor devices, lasers, semiconductor lasers, etc., can solve the problems of deterioration of reverse voltage characteristics, increase of current leakage, and lower current diffusion of light emitting devices, so as to improve electrical conductivity and/or crystallinity

Inactive Publication Date: 2009-10-01
SEOUL OPTO DEVICE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

"The present invention provides a light emitting device with improved electrical conductivity and crystal quality in the p-type nitride semiconductor layer. The device includes an n-type nitride semiconductor layer, an active layer on the n-type nitride semiconductor layer, an AlN / GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN / GaN layer of the super lattice structure. The p-type nitride semiconductor layer may be a p-GaN layer. The method for manufacturing the light emitting device includes forming an AlN / GaN layer on the substrate, stopping the growth of the AlN / GaN layer and supplying different source gases to grow the p-type nitride semiconductor layer. The resulting device has improved electrical conductivity and crystal quality."

Problems solved by technology

The use of Mg as a dopant results in an increase of current leakage, deterioration of reverse voltage characteristics, and lower current diffusion of the light emitting device, which decreases luminescence efficiency and brightness of the light emitting device.

Method used

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  • Light emitting device and method for manufacturing the same
  • Light emitting device and method for manufacturing the same
  • Light emitting device and method for manufacturing the same

Examples

Experimental program
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Effect test

experiment 1

[0067

[0068]In Experiment 1, relationship between light emission and Mg flow during growth of p-type AlN / u-GaN layers constituting a super lattice structure was measured.

[0069]Temperature: 980° C.

[0070]Mg 120 sccm, 180 sccm, 240 sccm, 300 sccm, 360 sccm, 480 sccm

[0071]60 pairs of p-type AlN / u-GaN layers, time 0.1 min. / 0.1 min.

[0072]FIG. 4 is a graph depicting the relationship between light emission and Mg flow. As can be seen in FIG. 4, overall light emission was increased due to the use of the AlN / GaN layer of the super lattice structure. When growing the AlN / GaN layer, light emission was varied according to the Mg flow, and maximum light emission was obtained near 180 sccm of Mg.

experiment 2

[0073

[0074]In Experiment 2, relationship between light emission and Al flow during growth of p-type AlN / u-GaN layers constituting a super lattice structure was measured.

[0075]Temperature: 980° C.

[0076]Al: 32 / 40 / 31 (−10%); 40 / 40 / 31; 49 / 40 / 31 (+10%)

[0077]60 pairs of p-type AlN / u-GaN layers, time 0.1 min. / 0.1 min.

[0078]FIG. 5 is a graph depicting the relationship between light emission and Al flow. As can be seen in FIG. 5, overall light emission was increased due to the use of the AlN / GaN layer of the super lattice structure. When growing the AlN / GaN layer, the light emission was varied according to the Al flow, and maximum light emission was obtained near 40 sccm of Al.

[0079]The method of manufacturing the light emitting device according to the embodiment of the present invention can be applied to a light emitting diode and other nitride-based optical devices such as a laser diode and the like.

[0080]Although the present invention has been described with reference to exemplary embodim...

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Abstract

Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN / GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN / GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.

Description

CROSS REFERENCE TO RELATED APPLICATION[0001]This application claims priority from and the benefit of Korean Patent Application No. 10-2008-0027494, filed on Mar. 25, 2008, which is hereby incorporated by reference for all purposes as if fully set forth herein.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a light emitting device and a method for manufacturing the same. More particularly, the present invention relates to a light emitting device that has a p-type AlN / GaN layer of a super lattice structure between a p-type nitride semiconductor layer and an active layer, and to a method for manufacturing the same.[0004]2. Description of the Related Art[0005]Generally, nitride-based semiconductors are widely used in blue / green light emitting diodes or laser diodes for light sources of full-color displays, traffic lights, general lighting fixtures, optical communication devices, etc. The nitride-based semiconductor includes an active laye...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L33/00H01L33/06H01L33/12H01L33/32
CPCB82Y20/00H01L33/04H01L33/32H01S2304/04H01S5/3216H01S5/34333H01S5/3063
Inventor KIM, GYU BEOMLEE, SANG JOONHAN, CHANG SUKKIM, KWANG CHOONG
Owner SEOUL OPTO DEVICE CO LTD