Transistor

Abstract

Provided is a transistor including a semiconductor insertion layer between a channel layer and a source electrode. A potential barrier between the channel layer and the source electrode may be increased by the semiconductor insertion layer. The channel layer may be an oxide semiconductor layer. The transistor may be an enhancement mode transistor.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims priority under U.S.C. §119 to Korean Patent Application No. 10-2009-0131292, filed on Dec. 24, 2009, in the Korean Intellectual Property Office (KIPO), the entire contents of which are incorporated herein by reference.BACKGROUND[0002]1. Field[0003]Example embodiments relate to a transistor, and more particularly, to an oxide transistor.[0004]2. Description of the Related Art[0005]Transistors are commonly used as switching devices or driving devices in electronic devices. In particular, a thin film transistor (TFT) may be formed on a glass substrate or on a plastic substrate. As a result, TFTs may be often used in the field of flat panel display devices, e.g., liquid crystal display devices and / or organic light emitting display devices.[0006]In order to improve the operational characteristics of a transistor, attempts have been made to utilize an oxide semiconductor layer as a channel layer of the transistor. This m...

AI Technical Summary

Benefits of technology

The patent describes a new type of transistor that can have its threshold voltage controlled more easily. This is achieved by adding a layer of semiconductor material between the channel layer and the source and drain electrodes. The semiconductor layer can be made of a variety of materials, such as silicon oxide, silicon nitride, or high-dielectric materials. The transistor can be a thin film transistor with either a top-gate or bottom-gate structure. The addition of a gate insulating layer between the channel layer and the gate electrode can further improve the performance of the transistor. Overall, this technology allows for better control over the threshold voltage of the transistor, which can be useful in various applications such as displays or sensors.

Problems solved by technology

However, the threshold voltage may be difficult to control in a transistor having an oxide semiconductor layer as the channel layer (hereinafter, an oxide transistor).

However, in the oxide transistor, controlling a threshold voltage through doping due to a self-compensation phenomenon may be difficult.

Accordingly, when an oxide semiconductor layer is used as a channel layer, realizing an enhancement mode transistor having a threshold voltage greater than 0 V (based on an n-type oxide transistor) may be difficult.

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