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Semiconductor device having a hetero-junction bipolar transistor and manufacturing method thereof

a semiconductor device and heterojunction technology, applied in the field of hbt and hfet integrated circuits, can solve the problems of bipolar transistor character deterioration, semiconductor device becoming more prone to breakdown, and current amplification factor (hfe) to decrease, so as to reduce collector resistance, prevent the effect of collector breakdown voltage decrease, and superior high frequency characteristics and processability

Inactive Publication Date: 2011-10-13
PANASONIC CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0019]Thus the present invention has been conceived in view of the problems and has a first object of providing a semiconductor device and a manufacturing method thereof which are capable of preventing decreases in the breakdown voltage of the collector, and reducing the resistance of the collector.
[0043]According to the present invention, it is possible to form a Bi-HFET which can prevent decreases in the breakdown voltage of the collector and which can reduce the collector resistance. Additionally, a high hfe Bi-HFET can be formed.

Problems solved by technology

However in the conventional semiconductor device, there are the following problems.
This causes the current amplification factor (hfe) to decrease and the character of a bipolar transistor to deteriorate.
When materials with a small band gap such as InGaAs are used in an activation layer (for example, channel 504b in FIG. 1), the semiconductor device becomes more prone to breakdowns due to electric field concentrations.
On the contrary, when the sub-collector layer has a low impurity concentration, the collector resistance of the HBT worsens.

Method used

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  • Semiconductor device having a hetero-junction bipolar transistor and manufacturing method thereof
  • Semiconductor device having a hetero-junction bipolar transistor and manufacturing method thereof
  • Semiconductor device having a hetero-junction bipolar transistor and manufacturing method thereof

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first embodiment

[0053]FIG. 2A is an overhead diagram which shows the structure of the HBT and HFET integrated circuit according to the first embodiment of the present invention. FIG. 2B is a cross section diagram which shows the structure of the same integrated circuit (the cross section diagram along the line A-A′ in FIG. 2A).

[0054]The integrated circuit includes a region (HBT region) 800 which functions as a collector-up type HBT, and a region (HFET region) 900 which functions as an HFET.

[0055]A channel layer 102 of a first conductivity, an emitter layer 103 of the first conductivity, a base layer 104 of a second conductivity with a band gap smaller than that of the emitter layer 103, a low impurity concentration collector layer 105 or a non-doped collector layer 105 which is of the first conductivity, a sub-collector layer 106 which is of the first conductivity and is doped with a impurity concentration higher than that of the collector layer 105, and a collector cap layer 107 on which a collect...

second embodiment

[0085]Next, a method for manufacturing the HBT and HFET integrated circuit according to the second embodiment of the present invention is described in detail using FIG. 4. FIG. 4 is a cross-section diagram for describing sequential steps of the method for manufacturing the integrated circuit.

[0086]First, the channel layer 102 made of InGaAs, in which an n-type uniformly doped layer or a δ doped layer is formed, is formed on the semi-insulating GaAs substrate 101 by epitaxial growth (FIG. 4(a) and (b)).

[0087]Next, an ion species which functions as an n-type carrier such as an Se ion, is implanted in a predetermined region of the semi-insulating GaAs substrate 101 on which the emitter contact region 108, the source region 901, and the drain region 902 are to be formed on the semi-insulating GaAs substrate 101. For example, the ion species is implanted at an acceleration voltage of 30 keV and with a dose amount of 1×1014cm−3.

[0088]Next, the region in which the ion species has been impl...

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Abstract

Method for manufacturing a semiconductor device. A channel layer is formed by epitaxially growing a semiconductor layer, in which an ion species of a first conductivity is implanted on a semiconductor substrate. A source region, a drain region, and an emitter region which are of the first conductivity, are formed by activating, using annealing, a portion of the semiconductor substrate in which the ion species has been implanted. An emitter layer of the first conductivity, a base layer of a second conductivity having a band gap smaller than a band gap of the emitter layer, and a collector layer of the first conductivity or a non-doped collector layer are sequentially and epitaxially grown on the channel layer.

Description

CROSS REFERENCE RELATED TO APPLICATION[0001]This application is a divisional of pending U.S. application Ser. No. 12 / 126,395 filed on May 23, 2008, which claims priority of Japanese Application No. 2007-148638, filed on Jun. 4, 2007, the disclosure of which is expressly incorporated herein by reference in its entirety.BACKGROUND OF THE INVENTION[0002](1) Field of the Invention[0003]The present invention relates to an HBT and HFET integrated circuit (Bi-HFET) used as a high-frequency semiconductor device and to a manufacturing method thereof.[0004](2) Description of the Related Art[0005]Hetero junction bi-polar transistors (HBT), which utilize semiconductors with large bandgaps in emitters, are high-frequency analogue devices used in cellular phones and the like. In particular, InGaP / GaAs GBTs that us InGaP in emitters have low temperature dependence, and methods of using InGaP / GaAs HBTs for highly reliable devices are expected to continually multiply.[0006]HBTs can be distinguished ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/8248
CPCH01L21/8249H01L27/0623H01L27/0605H01L21/8252
Inventor MURAYAMA, KEIICHITAMURA, AKIYOSHIMIYAJIMA, KENICHI
Owner PANASONIC CORP
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