Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Plasma generator

a plasma generator and high-frequency discharge technology, applied in plasma techniques, electric discharge tubes, antennas, etc., can solve the problems of inability to compensate the electron current lost from the plasma, and the stoppage of the ion beam irradiation device for maintenance for a long tim

Inactive Publication Date: 2014-02-13
NISSIN ION EQUIP CO LTD
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent relates to plasma generators used for ionization of gases using high-frequency discharge. The invention provides a method to prevent decrease in the PFG current by using an antenna and an insulating material. Additionally, a frame cover with protrusions is provided to prevent accumulation of insulating material and increase the PFG current. The invention also includes a conductive frame cover that serves as an electrode and increases the surface area, resulting in increased current flow. The use of carbon material for the frame cover and antenna ensures strong plasma resistance. Overall, this invention improves the performance and longevity of plasma generators.

Problems solved by technology

This results in stoppage of the ion beam irradiation device for maintenance for a long time.
Although the ions can obtain the electrons by recombining in the plasma, the electron current lost from the plasma cannot be compensated.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma generator
  • Plasma generator
  • Plasma generator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025]Exemplary embodiments of a plasma generator according to the present invention are explained below with reference to the accompanying drawings. In FIGS. 1 and 2, a configuration is explained as an example in which a plasma generator 10 is used in an ion beam irradiation device (this device is called an ion implantation apparatus when ion implantation is performed) that performs a process of ion implantation, etc., into a substrate 4 by irradiating the substrate (for example, semiconductor substrate) 4 with an ion beam 2 in a target chamber 8. The plasma generator 10 is attached outside the target chamber 8 located in the vicinity of an upstream side of the substrate 4 via an insulator 54.

[0026]In this example, the ion beam 2 is reciprocally scanned in an X direction (for example, horizontal direction) by the action of an electric field or a magnetic field. The substrate 4 is secured to a holder 6, and reciprocally scanned in a mechanical manner in a Y direction (for example, o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A plasma generator generates a plasma by ionizing a gas with a high-frequency discharge in a plasma generating chamber so that electrons from the plasma are emitted outside the plasma generator through an electron emitting hole. The plasma generator includes an antenna that is provided in the plasma generating chamber and that emits a high-frequency wave, and an antenna cover that is made of an insulating material and that covers an entire body of the antenna. A plasma electrode having the electron emitting hole is made of a conductive material. A frame cover with a protrusion ensures conductivity by preventing an insulating material from accumulating on a surface of the plasma electrode on a plasma side in sputtering by the plasma.

Description

BACKGROUND OF THE INVENTION[0001]This application is a continuation-in-part of U.S. patent application Ser. No. 13 / 198,429, filed Aug. 4, 2011, claiming priority to Japanese Patent Application No. 2010-186824, filed Aug. 24, 2010, the contents of which is incorporated by reference in its entirety.[0002]1. Field of the Invention[0003]The present invention relates to a high-frequency discharge plasma generator that is used for suppressing an electrostatic charge (charge-up), etc., on a surface of a substrate when ion beam irradiation is carried out in an ion beam irradiation device that performs ion implantation, etc., by, for example, irradiating the substrate with an ion beam.[0004]2. Description of the Related Art[0005]A plasma generator is disclosed in Japanese Patent Application Laid-open No. 2002-324511 (Paragraphs 0031 to 0038 and FIG. 1) as an example of a high-frequency discharge plasma generator described above used for suppressing an electrostatic charge on a surface of a s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): H05H1/46
CPCH05H1/46H01J37/3211H01J37/32357H01J37/32541H05H1/463H05H1/4652
Inventor FUJITA, HIDEKIIGO, TETSUYA
Owner NISSIN ION EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products