Method for manufacturing substrate

Abstract

A method for manufacturing a substrate is provided. The method includes irradiating a single crystal substrate with a beam of laser or charged particles while moving an irradiation point of the beam with respect to the single crystal substrate so that a trajectory of the irradiation point on a surface of the single crystal substrate describes a striped pattern of straight lines. Non-crystalline regions are formed in the single crystal substrate along the trajectory. The irradiation is repeated multiple times so that directions of the striped patterns are different from each other among the multiple times of irradiation. The repetition of the irradiation changes warpage of the single crystal substrate. All of directions of the straight lines described in the multiple times of irradiation are not parallel to any of directions of crystal axes of the single crystal substrate in a plane parallel to the surface.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims priority to Japanese Patent Application No. 2014-207213 filed on Oct. 8, 2014, the contents of which are hereby incorporated by reference into the present application.TECHNICAL FIELD[0002]The present application relates to a method for manufacturing a substrate.DESCRIPTION OF RELATED ART[0003]Japanese Patent Application Publication No. 2010-165817 discloses a technique in which property-modified regions are formed in a sapphire substrate by irradiating the sapphire substrate with a laser beam, thereby to control warpage of the sapphire substrate.BRIEF SUMMARY[0004]When warpage of a substrate is controlled by irradiating the substrate with a laser beam as described in Japanese Patent Application Publication No. 2010-165817, there are cases where the warpage of the substrate cannot be controlled as intended. Therefore, the present specification provides a technique of accurately controlling warpage of a substrate.[000...

AI Technical Summary

Benefits of technology

The patent text describes a technique for controlling warframe of a substrate by irradiating it with a laser beam. The text explains that there is a difference in the amount of warping that occurs depending on the direction of the laser beam irradiation. By keeping the direction of the laser beam irradiation perpendicular to the crystal axes of the substrate, the amount of warping can be controlled more accurately. In summary, this patent text provides a way to accurately control warming of a substrate by controlling the direction of laser beam irradiation.

Problems solved by technology

When warpage of a substrate is controlled by irradiating the substrate with a laser beam as described in Japanese Patent Application Publication No. 2010-165817, there are cases where the warpage of the substrate cannot be controlled as intended.

Therefore, if the trajectory of the irradiation point includes a direction parallel to a crystal axis and a direction not parallel to any crystal axes, the amount of warpage change varies depending on the directions, and the warpage of the substrate cannot be accurately controlled.

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