Unlock instant, AI-driven research and patent intelligence for your innovation.

Memory device and method for fabricating the same

Active Publication Date: 2016-12-22
MACRONIX INT CO LTD
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The invention provides a memory device with cap layers that can prevent the device structure from bending or collapsing. This is achieved by using nitrogen-containing material that makes the whole stack structure stiffer, making it more difficult for the device to bend or collide.

Problems solved by technology

Thus, how to develop a memory device and a method for fabricating the same to prevent the device structure having a high aspect ratio from being bent or collapsing is becoming an issue to work on.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory device and method for fabricating the same
  • Memory device and method for fabricating the same
  • Memory device and method for fabricating the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029]Reference will now be made in detail to the present preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.

[0030]FIGS. 1A to 1F are cross-sectional views illustrating a method for fabricating a memory device according to an embodiment of the invention.

[0031]Referring to FIG. 1A, first of all, a substrate 100 is provided. The substrate 100 may be a semiconductor substrate, a semiconductor compound substrate, or a semiconductor over insulator (SOI) substrate, for example. The semiconductor is IVA group atoms, such as silicon or germanium, for example. The semiconductor compound is formed of IVA group atoms, such as silicon carbide or silicon germanium, or formed of IIIA group atoms and VA group atoms, such as gallium arsenide, for example.

[0032]Then, a stack layer 102 is formed on the substrate 100. The sta...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided is a memory device including a stack structure, a plurality of first cap layers, and a plurality of second cap layers. The stack structure is located on a substrate. The stack structure includes a plurality of first conductive layers and a plurality of dielectric layers. The first conductive layers and the dielectric layers are stacked alternately. The first cap layers are located on sidewalls of the first conductive layers respectively. The second cap layers are located on sidewalls of the dielectric layers respectively.

Description

BACKGROUND OF THE INVENTION1. Field of the Invention[0001]The invention relates to a semiconductor device and a method for fabricating the same, and particularly relates to a memory device and a method for fabricating the same.2. Description of Related Art[0002]With the continuous development of science and technology, the demands to the storage capability also increase as the electronic products continue to improve. To improve the storage capability, memory devices become smaller and have a greater integrity. Thus, the industries now highly focus on three-dimensional memory devices.[0003]However, as the integrity of the three-dimensional memory devices increases, the surface force (e.g., a capillary force, a friction force, and an adhesive force) may significantly influence the stability of the structure of the three-dimensional memory devices due to a high surface-area-to-volume ratio. The influence is particularly significant to the devices having a high aspect ratio. Thus, how t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/115H01L21/28
CPCH01L21/28282H01L27/11568H10B43/35H10B43/27
Inventor LAI, HSIANG-YUYANG, ZU-SING
Owner MACRONIX INT CO LTD