Uniform wafer temperature achievement in unsymmetric chamber environment

Abstract

The present disclosure generally relates to a radiation shield for a process chamber which improves substrate temperature uniformity. The radiation shield may be disposed between a slit valve door of the process chamber and a substrate support disposed within the process chamber. In some embodiments, the radiation shield may be disposed under a heater of the process chamber. Furthermore, the radiation shield may block radiation and / or heat supplied from the process chamber, and in some embodiments, the radiation shield may absorb and / or reflect radiation, thus providing improved temperature uniformity as well as improving a planar profile of the substrate.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims priority to U.S. Provisional Patent Application Ser. No. 62 / 269,599, filed on Dec. 18, 2015, which herein is incorporated by reference.BACKGROUND[0002]Field[0003]Embodiments disclosed herein generally relate to semiconductor processing, and more specifically to an apparatus for providing uniform heat radiation loss in a process chamber.[0004]Description of the Related Art[0005]Plasma enhanced chemical vapor deposition (PECVD) is used to deposit thin films on a substrate, such as a semiconductor wafer or a transparent substrate. PECVD is generally accomplished by introducing a precursor gas or gas mixture into a vacuum chamber containing a substrate. The precursor gas or gas mixture is typically directed downwardly through a distribution plate situated near the top of the chamber. The precursor gas or gas mixture in the chamber is energized (e.g., excited) into a plasma by applying a power, such as a radio frequency...

AI Technical Summary

Benefits of technology

The disclosure is about a device that prevents radiation and heat from affecting a substrate during a processing process. It is placed between a slit valve and a substrate support in the chamber. This device absorbs or reflects the radiation and heat, resulting in better temperature control and a smoother substrate surface.

Problems solved by technology

Temperatures associated with the process chamber may be unsymmetrical, mainly due to the presence of a slit valve opening through which the substrate is transferred into and out of the process chamber.

The non-symmetry causes non-uniform radiation heat loss from the heater and the substrate, and further creates higher temperature variations within the substrate.

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