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Method of preparing quantum dot layer, qled display device having the quantum dot layer and method of preparing the same

a display device and quantum dot technology, applied in the field of display technology, can solve the problems of short life time or the like, self-quenching, low luminous efficiency,

Active Publication Date: 2017-09-21
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present patent improves the efficiency of quantum dots in a QLED display device by using an anodic aluminum oxide sheet to prepare the quantum dot layer. This results in even distribution of quantum dots and uniform light emission, which increases the luminous intensity and life time of the quantum dots. Overall, this enhances the lighting performance of the QLED display device.

Problems solved by technology

However, there is a big problem in an application of the QLED display device, that is, quantum dots tend to be aggregated so that defects such as self-quenching, low luminous efficiency, short life time or the like may occur.
Therefore, during preparing a QLED display device, a problem to be solved is how to disperse and stabilize quantum dots in the QLED display device.

Method used

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Embodiment Construction

[0055]The following embodiments are intended to explain the present disclosure, rather than limiting the scope of the present invention.

[0056]According to an embodiment of the present disclosure, it is provided a method of preparing a quantum dot layer, comprising: placing an anodic aluminum oxide (AAO) sheet with a plurality of through holes on a substrate; dispersing quantum dots into the plurality of through holes of the anodic aluminum oxide sheet; and removing the anodic aluminum oxide sheet to form a quantum dot layer.

[0057]FIG. 2 is an atomic force microscope (AFM) diagram of a quantum dot layer prepared by a method according to an embodiment of the present disclosure, as shown in FIG. 2, quantum dots are dispersed and stabilized in the prepared quantum dot layer, so that they are not easily aggregated.

[0058]In an embodiment, the quantum dots are dispersed into the plurality of through holes of the anodic aluminum oxide sheet by means of drop-in or spin-coating. However, it s...

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Abstract

A method of preparing a quantum dot layer, including: placing an anodic aluminum oxide sheet with a plurality of through holes on a substrate; dispersing quantum dots into the plurality of through holes of the anodic aluminum oxide sheet; and removing the anodic aluminum oxide sheet to form a quantum dot layer.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of Chinese Patent Application No. 201610151173.2 filed on Mar. 16, 2016 in the State Intellectual Property Office of China, the whole disclosure of which is incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]Field of the Invention[0003]Embodiments of the present disclosure relates to a field of display technology, in particular, to a method of preparing a quantum dot layer, a quantum dot light emitting diode (QLED) display device having the quantum dot layer and a method of preparing the QLED display device.[0004]Description of the Related Art[0005]Quantum dot, also referred as nano-crystal, refers to a nano-particle which has nano-scale sizes (i.e. 1 nm to 100 nm) in three dimensions. Due to quantum confinement effect, quantum dot has physical and chemical properties different from macro-material. Quantum dot plays an important role in a research of nano-material structure, synthesis and ...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/44H01L33/62
CPCH01L33/06H01L33/62H01L2933/0066H01L2933/0033H01L2933/0025H01L33/44C25D11/045C25D11/10C25D11/12H10K50/115H10K59/873H10K50/844
Inventor XU, XIAONAYANG, TIANTIAN, BIAOKANG, ZHAOZHU, XIAOYANCHEN, NINGZHOU, XIANG
Owner BOE TECH GRP CO LTD