Substrate structure and manufacturing method thereof
a technology of substrate structure and manufacturing method, which is applied in the direction of semiconductor devices, semiconductor/solid-state device details, electrical apparatus, etc., can solve the problems of difficult narrowing the aperture of blind holes and inability to achieve circuits with fine pitch, and achieve low-cost and high-electric effects
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[0029]Reference will now be made to the drawings to describe various inventive embodiments of the present disclosure in detail, wherein like numerals refer to like elements throughout.
[0030]FIG. 1, FIG. 2 and FIG. 3 depict a first embodiment of the present invention. FIG. 1 is a schematic diagram of a substrate structure 1 andFIG. 2 is a schematic diagram of a part of substrate structure 1. FIG. 3 is a sectional diagram of A-A′ line of FIG. 1. The substrate structure 1 comprises a metal substrate 101, a first connection layer 103, a second connection layer 105, a metal core layer 107, an internal component 109, a dielectric material layer 111, a conductive pillar layer 113 and a conductive wiring layer 115. The metal substrate 101 has a first surface 1011 and a second surface 1013. The first connection layer 103 has a surface 1031. The second connection layer 105 has a surface 1051. The metal core layer 107 has an opening 1071. The internal component 109 has a plurality of electrode...
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