Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device resistor structure

a technology of resistor structure and semiconductor device, which is applied in the direction of semiconductor device details, semiconductor/solid-state device details, diodes, etc., can solve the problems of temperature to rise further, resistance to change, and distortion of ac signals

Active Publication Date: 2018-03-22
GLOBALFOUNDRIES U S INC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The structure enables operation at higher power levels with reduced distortion, maintaining heat transfer capabilities while reducing parasitic capacitance and impedance, thus improving the performance of resistors in higher power and AC applications.

Problems solved by technology

However, insulators of electricity are typically thermal insulators, and resistors formed on insulators are subject to self-heating, that is, the current in the resistor raises the temperature of the resistor, which causes the resistance value to change, which, if resistance increases, can cause the temperature to raise further, which can cause the resistance to change, etc.
In AC circuits, this can create non-linear behavior that can cause distortion of AC signals.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device resistor structure
  • Semiconductor device resistor structure
  • Semiconductor device resistor structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013]Various examples are disclosed herein of a resistor structure that allows use of thinner dielectric layers for reduced impediment to heat transfer. A resistor body is formed on a resistor dielectric material layer over a doped well formed in a semiconductor layer, such as a substrate, the doped well reducing parasitic capacitance while providing heat dissipation. The doped well in embodiments can include a gradient of dopant concentration, which can end in a graded junction beneath the doped well, further reducing parasitic capacitance. The dopant concentration gradient and / or graded junction can be formed by, for example, multiple implantations of one or more dopants at various depths and / or concentrations, altering the conductivity and other electrical properties of the host material, but leaving the heat transfer capability of the host material largely unchanged. Additionally, the structure can be formed using steps easily integrated into middle-end-of-line or back-end-of-l...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A resistor body is separated from a doped well in a substrate by a resistor dielectric material layer. The doped well is defined by at least one doped region and can include a dopant gradient in the doped well to reduce parasitic capacitance of the resistor structure while retaining heat dissipation properties of the substrate. The resistor body is formed in a cavity in a dielectric layer deposited on the substrate, which deposition can be part of a concurrent fabrication, such as part of forming shallow trench isolations, and the cavity can be lined with the resistor dielectric material.

Description

BACKGROUNDTechnical Field[0001]The present disclosure relates to elements of photolithographically manufactured integrated circuits (ICs), and more specifically, to the fabrication of a resistor structure with improved heat dissipation, which may be particularly applicable in higher power and alternating current (AC) applications.Related Art[0002]Semiconductor devices, particularly ICs, are manufactured by depositing, patterning, and removing layers of material. Most ICs include resistors, which are typically formed using polysilicon on an insulator material to reduce parasitic capacitance during operation. However, insulators of electricity are typically thermal insulators, and resistors formed on insulators are subject to self-heating, that is, the current in the resistor raises the temperature of the resistor, which causes the resistance value to change, which, if resistance increases, can cause the temperature to raise further, which can cause the resistance to change, etc. In A...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): H01L49/02H01L21/3205H01L21/02H01L27/06H10N97/00
CPCH01L28/20H01L21/32055H01L21/02164H01L27/0629H01L21/02532H01L21/02595H01L21/02579H01L21/02181H01L23/367H01L23/647
Inventor ZANG, HUIWATTS, JOSEF S.PANDEY, SHESH M.
Owner GLOBALFOUNDRIES U S INC