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Nitride semiconductor light emitting device including buffer layer and method of forming the same

a technology of semiconductor light emitting device and buffer layer, which is applied in the direction of semiconductor devices, electrical devices, nanotechnology, etc., can solve the problems of warpage, high dislocation density, and/or other defects

Inactive Publication Date: 2018-11-22
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent describes a semiconductor device that is used to produce light. The device includes a substrate, several layers of buffer layers, and a layer of Group-III nitride semiconductor material. These layers are made with a specific composition that includes aluminum, nitrogen, and oxygen, and the oxygen concentration is higher in the first and third layers than in the second layer. This layered structure results in improved performance of the semiconductor device and better quality light emission. The patent also provides a method for forming the semiconductor device using multiple physical vapor deposition methods. The technical effects of this patent include better performance and higher quality light emission from semiconductor devices.

Problems solved by technology

However, when the nitride is grown, dislocation density may be high as a result of a lattice constant mismatch between the substrate and the Group-III nitride layer.
As a result, cracks, warpage, and / or other defects may occur due to different thermal expansion coefficients of the layers.

Method used

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  • Nitride semiconductor light emitting device including buffer layer and method of forming the same
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  • Nitride semiconductor light emitting device including buffer layer and method of forming the same

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Embodiment Construction

[0014]FIGS. 1 to 4 are cross-sectional views illustrating embodiments of a buffer layer which may be used, for example, in a semiconductor light emitting device.

[0015]Referring to FIG. 1, a semiconductor light emitting device 10 includes a buffer layer 12 on a substrate 11 and a semiconductor stacked-layer structure L on the buffer layer 12. The semiconductor stacked-layer structure L may be connected to an electrode.

[0016]The substrate 11 may include, for example, sapphire, SiC, Si, MgAl2O4, MgO, LiAlO2, LiGaO2, or GaN. In one embodiment, the buffer layer 12 may be formed on a sapphire substrate as the substrate 11 to reduce lattice mismatch, improve crystalline properties, and allow for formation of a high quality semiconductor stacked-layer structure L.

[0017]The buffer layer 12 includes a first layer 121, a second layer 122, and a third layer 123. The first layer 121 is on the substrate 11, the second layer 122 is on the first layer 121, and the third layer 123 is on the second l...

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Abstract

A semiconductor light emitting device includes a Group-III nitride semiconductor layer on a buffer layer. The buffer layer includes a first layer, a second layer, and a third layer in that order. Each of the first layer, the second layer, and the third layer includes a composition which includes aluminum (Al), nitrogen (N), and oxygen (O). A minimum or average value of an oxygen concentration (atoms / cm3) of each of the first layer and the third layer is greater than an oxygen concentration (atoms / cm3) of the second layer.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]Korean Patent Application No. 10-2017-0061585, filed on May 18, 2017, and entitled, “Nitride Semiconductor Light Emitting Device Including Buffer Layer And Method Of Forming The Same,” is incorporated by reference herein in its entirety.BACKGROUND1. Field[0002]One or more embodiments described herein relate to a nitride semiconductor light emitting device including a buffer layer and a method for forming the same.2. Description of the Related Art[0003]One type of semiconductor light emitting device emits light based on a recombination of electrons and holes in a light emitting layer. Such a device is used as a light source for lighting apparatuses and flat panel displays.[0004]A semiconductor light emitting device may be formed from a material which includes a Group-III nitride. The Group-III nitride may be grown on a substrate to form a high quality single crystalline layer. However, when the nitride is grown, dislocation density may be h...

Claims

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Application Information

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IPC IPC(8): H01L33/32H01L33/12
CPCH01L33/325H01L33/12B82Y20/00H01L33/007H01L33/32H01L33/16H01L33/0075
Inventor HAN, JUNG TAEKMAENG, JONG SUNCHO, JEEN SEOKKIM, SUN WOONJEONG, YONG HEE
Owner SAMSUNG ELECTRONICS CO LTD