Self-forming barrier process
a self-forming barrier and zinc technology, applied in the direction of liquid/solution decomposition chemical coating, coating, basic electric elements, etc., can solve the problems of copper via pre-fill, reliability concerns, and resistance reduction, and achieve the effect of reducing via resistance and reliability
Active Publication Date: 2018-12-27
LAM RES CORP
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Benefits of technology
The patent text describes a process for creating metallized vias using a specific alloy called M-Zn, where M can be copper, cobalt, or nickel. The metal is doped with a negatively charged element called Zn, which forms a barrier to oxygen diffusion when heated. This improves the scaling of back-end processes and reduces resistivity and reliability issues in future technology nodes.
Problems solved by technology
Although this reduces via resistance compared to the baseline, reliability concerns still exist as there is no interfacial adhesion and diffusion barrier between cobalt and oxide / low-k dielectric.
Copper via pre-fill, while technically possible, fails reliability due to poor adhesion between Cu and the dielectric.
Method used
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[0044]In the following description, numerous specific details are set forth to provide a thorough understanding of the presented embodiments. The disclosed embodiments may be practiced without some or all of these specific details. In other instances, well-known process operations have not been described in detail to not unnecessarily obscure the disclosed embodiments. While the disclosed embodiments will be described in conjunction with the specific embodiments, it will be understood that it is not intended to limit the disclosed embodiments.
[0045]In keeping with Moore's Law, there has been a continual drive towards smaller and smaller feature sizes in the semiconductor industry. At present, semiconductor manufacturers are commonly producing devices with a 28 nanometer (nm) feature size, or approximately 28 nm pitch. Devices with a 36 nm pitch size are expected to soon. Typically, the pitch is halved every two technology nodes. Thus, it is expected that within about two to three no...
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Abstract
A method is provided, including the following operations: performing a deposition process on a substrate, the deposition process configured to deposit a copper layer in a feature on the substrate, the copper layer being doped with zinc at an atomic percentage less than approximately 30 percent; after depositing the copper layer, annealing the substrate, wherein the annealing is configured to cause migration of the zinc to an interface of the copper layer and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that inhibits electromigration of the copper layer.
Description
FIELD OF THE INVENTION[0001]Implementations of the present disclosure relate to a zinc self-forming layer, and related methods, apparatus, and systems.DESCRIPTION OF THE RELATED ART[0002]A typical current dual-damascene process flow involves depositing a barrier / liner layer (e.g. TaN / Ta, TiN / Ti, etc.) prior to via metallization with Cu. The barrier / liner stack improves adhesion between Cu and oxide / low-k dielectric, and also serves to retard electromigration. The barrier / liner also acts as a diffusion barrier for Cu and is thus needed for reliability. However, the barrier / liner stack at the line / via interface is highly resistive and prevents further scaling as via dimensions shrink.[0003]Currently, via pre-fill using an electroless cobalt process is being explored as an alternative. Although this reduces via resistance compared to the baseline, reliability concerns still exist as there is no interfacial adhesion and diffusion barrier between cobalt and oxide / low-k dielectric. Copper...
Claims
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IPC IPC(8): H01L21/768H01L23/532H01L23/522
CPCH01L21/76858H01L23/5226H01L23/53238H01L21/76877H01L21/76843H01L21/2885H01L23/53209H01L21/76867H01L21/76883H01L21/76831H01L21/76847H01L23/53266C23C18/48C25D3/58C25D5/50C23C18/1692C23C18/50C23C18/1651C23C18/54
Inventor JOI, ANIRUDDHADORDI, YEZDI
Owner LAM RES CORP