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Semiconductor structure and fabrication method thereof

a technology of semiconductors and semiconductors, applied in the field of semiconductor structures, can solve the problems of more complicated and smaller circuit designs in the products of the new generation, and achieve the effects of improving device performance, reducing contact resistance, and improving semiconductor structur

Active Publication Date: 2020-04-02
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention improves the connection between the source / drain contact and the source / drain, which reduces contact resistance and enhances device performance.

Problems solved by technology

The development of semiconductor integrated circuit technology progresses continuously and circuit designs in products of the new generation become smaller and more complicated than those of the former generation.

Method used

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  • Semiconductor structure and fabrication method thereof
  • Semiconductor structure and fabrication method thereof
  • Semiconductor structure and fabrication method thereof

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Embodiment Construction

[0011]In the following detailed description of the disclosure, reference is made to the accompanying drawings, which form a part hereof, and in which is shown, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present invention.

[0012]The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims, along with the full scope of equivalents to which such claims are entitled. One or more implementations of the present invention will now be described with reference to the attached drawings, wherein like reference numerals are used to refer to like elements throughout, and wherein the illustrated structures ar...

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Abstract

A semiconductor structure includes a semiconductor substrate, at least a silicon germanium (SiGe) epitaxial region disposed in the semiconductor substrate, and a contact structure disposed on the SiGe epitaxial region. The contact structure includes a titanium nitride (TiN) barrier layer and a metal layer surrounded by the TiN barrier layer. A crystalline titanium germanosilicide stressor layer is disposed in the SiGe epitaxial region and between the TiN barrier layer and the SiGe epitaxial region.

Description

CROSS REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of Taiwan patent application No. 107134069, filed on Sep. 27, 2018, the disclosure of which is incorporated herein in its entirety by reference.BACKGROUND OF THE INVENTION1. Field of the Invention[0002]The present invention relates to the field of semiconductor technology, and more particularly to a semiconductor structure and a method of fabricating the same.2. Description of the Prior Art[0003]The development of semiconductor integrated circuit technology progresses continuously and circuit designs in products of the new generation become smaller and more complicated than those of the former generation. The amount and the density of the functional devices in each chip region are increased constantly according to the requirements of innovated products, and the size of each device has to become smaller accordingly. As the size of the device becomes smaller, the influence of the contact resistance at the ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L29/78H01L29/66H01L29/04H01L29/10H01L29/161H01L29/51H01L29/49H01L21/768H01L21/324
CPCH01L29/04H01L29/7851H01L29/66795H01L29/51H01L21/76805H01L29/161H01L21/324H01L29/4966H01L29/1079H01L29/41791H01L29/7848H01L29/785H01L29/665H01L29/7845H01L29/165H01L29/456H01L21/28518H01L21/76843H01L21/76855H01L21/76897H01L21/76814H01L29/66636H01L29/1054
Inventor HUANG, CHENG-YEHHSU, TE-CHANGHUANG, CHUN-JENLIN, CHE-HSIENWANG, YAO-JHAN
Owner UNITED MICROELECTRONICS CORP