Semiconductor device
a technology of semiconductors and devices, applied in the direction of semiconductor devices, electrical equipment, transistors, etc., can solve the problem of limiting the scaling law,
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embodiment 1
[0090]In this embodiment, a transistor according to one embodiment of the present invention will be described.
[0091]FIG. 1A is a top view of a transistor according to one embodiment of the present invention. FIG. 1B is a cross-sectional view taken along dashed-dotted line A1-A2 in FIG. 1A. FIG. 1C is a cross-sectional view taken along dashed-dotted line A3-A4 in FIG. 1A. Note that a base insulating film 102 and the like are not illustrated in FIG. 1A for simplicity.
[0092]In FIG. 1A, the channel length (L) and the channel width (W) of the transistor are shown. Note that the channel region of the transistor corresponds to a region of an oxide semiconductor film 106 overlapping with a gate electrode 104. At least part of two side surfaces of the oxide semiconductor film 106 overlap with the gate electrode 104.
[0093]In the transistor illustrated in FIG. 1A, the channel length is greater than or equal to 5 nm and less than 60 nm, and the channel width is greater than or equal to 5 nm and...
embodiment 2
[0219]In this embodiment, a transistor having a different structure from any of the transistors in Embodiment 1 will be described.
[0220]FIG. 7A is a top view of a transistor according to one embodiment of the present invention. FIG. 7B is a cross-sectional view taken along dashed-dotted line E1-E2 in FIG. 7A. FIG. 7C is a cross-sectional view taken along dashed-dotted line E3-E4 in FIG. 7A. Note that a base insulating film 202 and the like are not illustrated in FIG. 7A for simplicity.
[0221]In FIG. 7A, the channel length (L) and the channel width (W) of the transistor are shown. Note that the channel region of the transistor corresponds to a region of an oxide semiconductor film 206 overlapping with a gate electrode 204. At least two side surfaces of the oxide semiconductor film 206 overlap with the gate electrode 204.
[0222]In the transistor illustrated in FIG. 7A, the channel length is greater than or equal to 5 nm and less than 60 nm, and the channel width is greater than or equal...
embodiment 3
[0255]In this embodiment, a transistor having a different structure from any of the transistors in Embodiments 1 and 2 will be described.
[0256]FIG. 9A is a top view of a transistor according to one embodiment of the present invention. FIG. 9B is a cross-sectional view taken along dashed-dotted line F1-F2 in FIG. 9A. FIG. 9C is a cross-sectional view taken along dashed-dotted line F3-F4 in FIG. 9A. Note that a base insulating film 302 and the like are not illustrated in FIG. 9A for simplicity.
[0257]In FIG. 9A, the channel length (L) and the channel width (W) of the transistor are shown. Note that the channel region of the transistor corresponds to a region of an oxide semiconductor film 306 overlapping with a gate electrode 304. At least two side surfaces of the oxide semiconductor film 306 overlap with the gate electrode 304.
[0258]In the transistor illustrated in FIG. 9A, the channel length is greater than or equal to 5 nm and less than 60 nm, and the channel width is greater than o...
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Abstract
Description
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