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Situ grown SiC coatings on carbon materials

a technology of carbon materials and sic coatings, which is applied in the direction of coatings, transportation and packaging, carbides, etc., can solve the problems of hazardous cvd liquids and gasses, and achieve the effects of simple vacuum furnaces, reduced raw material costs, and reduced cost of coatings

Active Publication Date: 2017-05-30
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach allows for SiC coating at significantly lower temperatures, making it feasible for non-refractory materials and reducing costs by eliminating the need for hazardous precursors and specialized equipment, while providing a cost-effective and safer process.

Problems solved by technology

CVD uses expensive liquids and gasses that are hazardous.

Method used

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  • Situ grown SiC coatings on carbon materials
  • Situ grown SiC coatings on carbon materials
  • Situ grown SiC coatings on carbon materials

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0022]SiO2 powder and activated carbon are mixed with a mortar and pestle. The mixture is placed in a vitreous carbon reaction vessel. A vitreous carbon disk is placed in the vessel. The vessel is placed in a graphite vacuum furnace and heated to 1600° C. at 5° C. / min and held for 4 hours. FIG. 1 shows a photograph of the disk before and after coating with SiC. FIG. 2 is an X-ray diffraction pattern of the vitreous carbon disk before and after coating.

example 2

[0023]Tetraethylorthosilicate (TEOS) which is an alkoxide precursor for SiO2 is mixed with dissolved sugar and dried. The dried mixture is placed in a vitreous carbon crucible having a large height to diameter ratio. The crucible is caped, placed in a vacuum furnace and heated at 5° C. / minute to 1600° C. for 10 hours. FIG. 3 shows an uncoated crucible and a SiC-coated crucible.

example 3

[0024]This example is the same process as either example 1 or 2 with the exception that a porous carbon material is placed in the reaction vessel. The result is a SiC porous material.

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Abstract

A method of forming a β-SiC material or coating by mixing SiO2 with carbon and heating the mixture in vacuum wherein the carbon is oxidized to CO gas and reduces the SiO2 to SiO gas and reacting a carbon material with the SiO gas at a temperature in the range of 1300 to 1600° C. resulting in a SiC material or a SiC coating on a substrate. Also disclosed is the related SiC material or coating prepared by this method.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This Application claims the benefit of U.S. Provisional Application 61 / 477,668 filed on Apr. 21, 2011, the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]Field of the Invention[0003]The present invention relates generally to SiC coatings and more specifically to SiC coatings on carbon materials.[0004]Description of the Prior Art[0005]SiC is a hard, strong, chemically resistant material that is thermally and electrically conductive. Due to its covalent bonding, it is very difficult to densify without the use of additives that compromise its material properties. However, in many cases a monolithic material is not needed. SiC can be deposited as a coating by techniques such as chemical vapor deposition (CVD), plasma enhanced CVD, and direct chemical reaction between carbon and molten silicon. SiC coatings are used to protect a weaker or less resistant material by isolating it from the environme...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): C23C16/00C04B41/89C04B41/00C04B41/52C04B41/50C04B41/87C04B35/573
CPCC01B31/36C04B35/573C04B41/009C04B41/5059C04B41/52C04B41/87C04B41/89C04B35/52C04B35/10C04B41/4529C04B41/4556C04B41/5001C04B41/4558C04B2235/3418C04B2235/424C04B2235/425C04B2235/441C04B2235/762Y10T428/30C01B32/956C01B32/97
Inventor VILLALOBOS, GUILLERMO R.HUNT, MICHAELSADOWSKI, BRYANSANGHERA, JASBINDER S.AGGARWAL, ISHWAR D.
Owner THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY