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Power conversion device with a voltage generation part that is configured to supply current to a sense diode and a sense resistor in select situations

a power conversion device and voltage generation technology, applied in the field of semiconductor devices, can solve the problems of increasing the forward voltage of the diode, and increasing the forward-directional loss of the diod

Active Publication Date: 2017-10-17
TOYOTA JIDOSHA KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent text describes a power conversion device that includes a special transistor that can detect if a diode is conducting electricity. The technical effect of this is that it allows for more precise control and efficiency in the conversion of power.

Problems solved by technology

Therefore, when a gate signal is input into the transistor to turn on the transistor, the anode and the cathode of the diode tend to take the same potential, which makes it difficult for the diode to operate in the forward direction.
Consequently, gate interference may occur that increases the forward voltage of the diode.
Thus, in a case where the diode conducts electricity, if a gate signal is input into the transistor to turn on the transistor, there is a problem that the forward-directional loss of the diode increases.

Method used

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  • Power conversion device with a voltage generation part that is configured to supply current to a sense diode and a sense resistor in select situations
  • Power conversion device with a voltage generation part that is configured to supply current to a sense diode and a sense resistor in select situations
  • Power conversion device with a voltage generation part that is configured to supply current to a sense diode and a sense resistor in select situations

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Experimental program
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Effect test

first embodiment

[0021][First Embodiment]

[0022]FIG. 1 is a circuit diagram of a semiconductor device 1 included in a power conversion device according to the embodiment. Note that the power conversion device according to the embodiment may be, for example, an inverter that converts DC power of a battery into three-phase AC power to supply it to a three-phase AC motor; a boost converter that boosts the voltage of a battery; or the like, in a hybrid vehicle, an electric vehicle, or the like. Also, the semiconductor device 1 may be used as a power switching element that is built in the inverter or the boost converter.

[0023]The semiconductor device 1 includes a drive circuit 10, a diode built-in transistor20, a sense resistor 30, a current source 40, a comparator 50, and a reference voltage Vref1.

[0024]The drive circuit 10 is configured to be capable of outputting a drive signal to gates of a transistor 21m and a sense transistor 21s included in the diode built-in transistor 20, which will be described ...

second embodiment

[0050][Second Embodiment]

[0051]Next, a second embodiment will be described.

[0052]A semiconductor device 1 included in a power conversion device according to the embodiment differs from the first embodiment in that a pull-up resistor 45 is provided instead of the current source 40. In the following, the same elements as in the first embodiment are assigned the same numerical codes, and different parts will be mainly described.

[0053]FIG. 3 is a circuit diagram of a semiconductor device 1 included in the power conversion device according to the embodiment. Here, the pull-up resistor 45 will be described that is a different part from FIG. 1 in the first embodiment.

[0054]The pull-up resistor 45 is branched off and connected to the sense resistor 30 and (the anode of) the sense diode 22s. Also, the pull-up resistor 45 is configured, with respect to the potential of one terminal of the pull-up resistor 45 on the side of the sense resistor 30, to have the potential of the other terminal hig...

third embodiment

[0061][Third Embodiment]

[0062]Next, a third embodiment will be described.

[0063]A semiconductor device 1 included in a power conversion device according to the embodiment mainly differs from the first embodiment that the sense resistor 30 is not provided. In the following, the same elements as in the first embodiment are assigned the same numerical codes, and different parts will be mainly described.

[0064]FIG. 4 is a circuit diagram of the semiconductor device 1 included in the power conversion device according to the embodiment.

[0065]The semiconductor device 1 includes a drive circuit 10, a diode built-in transistor 20, a current source 40, a comparator 50, and a reference voltage Vref1. The current source 40 and the comparator 50 will be described that are different from the first embodiment.

[0066]The current source 40 can supply a predetermined current, and is configured to be capable of supplying the predetermined current to (the anode of) the sense diode 22s, to which the curren...

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PUM

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Abstract

A power conversion device includes a diode built-in transistor configured to include a transistor configured to be driven by a drive signal input into a gate, a diode configured to be connected in parallel with transistor, and have a forward direction from an emitter to a collector of the transistor, and sense diode configured to detect a current flowing in the diode, and have a cathode connected with the collector of the transistor; voltage generation part configured to generate, in a case where the diode does not conduct electricity, voltage between an anode of the diode and an anode of the sense diode, the voltage having a predetermined or greater difference with respect to a case where the diode conducts electricity; and determination part configured to determine whether the diode conducts electricity, based on the voltage between the anode of the diode and the anode of the sense diode.

Description

TECHNICAL FIELD[0001]The disclosures herein generally relate to a semiconductor device that includes a transistor having a diode built in.BACKGROUND ART[0002]Conventionally, a power conversion device, such as an inverter and a converter, may use a diode built-in transistor that has a transistor and a diode provided on the same substrate.[0003]The diode built-in transistor has an electrode common to the collector electrode of the transistor and the cathode electrode of the diode, and an electrode common to the emitter electrode of the transistor and the anode electrode of the diode. Therefore, when a gate signal is input into the transistor to turn on the transistor, the anode and the cathode of the diode tend to take the same potential, which makes it difficult for the diode to operate in the forward direction. Consequently, gate interference may occur that increases the forward voltage of the diode. Thus, in a case where the diode conducts electricity, if a gate signal is input int...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H02M7/537H02M1/32H03K17/082H03K17/18H02M1/08H02M1/00
CPCH02M7/537H02M1/08H02M1/32H03K17/0828H03K17/18H02M2001/0009H03K2217/0027H02M1/0009
Inventor OSANAI, YOSUKEKOISHI, AYUKI
Owner TOYOTA JIDOSHA KK