Insulated gate semiconductor device with stripe widths

a technology of semiconductor devices and strips, applied in semiconductor devices, transistors, electrical devices, etc., can solve the problems of igbt breakdown, latch-up failure, and liable to occur at specific positions, so as to prevent the effect of being broken down

Inactive Publication Date: 2000-08-15
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The formation of the stripe-shaped fifth semiconductor layer of the second conductivity type in the fourth semiconductor layer can promote a carrier current flow to reduce the carrier current concentrated on the main electrodes within the active region adjacent the fourth semiconductor layer. The metho...

Problems solved by technology

The breakdown due to latch-up is considered to be liable to occur...

Method used

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Examples

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Effect test

Embodiment Construction

Description will be given on an insulated gate semiconductor device and a method of fabricating the same of a first preferred embodiment according to the present invention.

FIG. 1 is an enlarged view of a portion corresponding to the region X enclosed by the dashed-and-dotted lines of FIG. 33 used for description of the conventional IGBT.

Referring to FIG. 1, stripe-shaped IGBT cells each including a contact hole CH.sub.1 having a width W.sub.ch1 are spaced a constant distance W.sub.cel from each other in parallel inside a corner portion indicated by the lines C--O--C'. A p type semiconductor region 11 including a stripe-shaped contact hole CH.sub.P having a width W.sub.ch2 is formed outside the corner portion indicated by the lines C--O--C'. FIG. 2 is a sectional view taken along the line A-A' of FIG. 1.

FIG. 2 illustrates the IGBT cells described with reference to FIG. 32 which are arranged in parallel such that emitter electrodes 9 are connected to upper surfaces of p type base regi...

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Abstract

There is disclosed an insulated gate bipolar transistor which includes a p type semiconductor region (11) formed in a surface of an n- semiconductor layer (3) by double diffusion in corresponding relation to a p type base region (4) of an IGBT cell adjacent thereto, and an emitter electrode (9) formed on and connected to the p type semiconductor region (11) through a contact hole (CHP) having a width (Wch2) which is greater than a width (Wch1) of a contact hole (CH1), thereby preventing device breakdown due to latch-up by the operation of a parasitic thyristor during an ON state and during an ON-state to OFF-state transition even if main and control electrodes in an active region are reduced in size.

Description

BACKGROUND OF THE INVENTION1. Field of the InventionThe present invention relates to an insulated gate semiconductor device such as an insulated gate bipolar transistor (referred to as an IGBT hereinafter) and a method of fabricating the same.2. Description of the Background ArtAn insulated gate semiconductor device comprises a plurality of p type and n type semiconductor layers alternately joined together in series such that the semiconductor layers at opposite ends are electrically, connected to positive and negative main electrodes, respectively, and at least one of the other semiconductor layers is joined to a gate electrode applying an electric field through an insulator.<Construction of Background Art Device>in general, an IGBT comprises a multiplicity of IGBT elements (referred to as IGBT cells hereinafter) connected in parallel. FIG. 32 is a cross sectional view showing a basic structure of an IGBT cell forming the IGBT.Referring to FIG. 32, a p.sup.+ semiconductor lay...

Claims

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Application Information

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IPC IPC(8): H01L21/331H01L29/417H01L29/66H01L29/40H01L21/02H01L29/739H01L29/78H01L29/06H01L29/10H01L29/745H01L29/749
CPCH01L29/102H01L29/1095H01L29/41708H01L29/41741H01L29/66333H01L29/66348H01L29/7395H01L29/7397H01L29/7455H01L29/749H01L29/0619H01L2224/0603
Inventor TAKAHASHI, HIDEKI
Owner MITSUBISHI ELECTRIC CORP
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