The application relates to the field of
semiconductor technology and discloses a method for improving the
ion implantation uniformity of a high-energy
ion implanter, which comprises the following steps: firstly, generating
plasma with a density of 10^11 / m^3 in an arc chamber by optimizing
ion source excitation parameters; then, establishing a
mathematical model based on a
mean square deviation formula, calculating a deviation coefficient of an injection beam current intensity in real time, and adjusting the
moving speed of a scanning mechanism in a
closed loop to realize
dose compensation; in addition, a full
solid-state
radio frequency power supply and a multistage
resonant cavity are adopted to reduce
energy loss, and a
composite structure manufactured by a vacuum
brazing process is used to improve the
thermal stability of an extraction
system. In combination with
atomic mass analysis and an energy screening model, the application precisely controls the beam quality from multiple dimensions such as a physical source,
energy management and
structural deformation. The method significantly improves the spatial uniformity and depth consistency of the implantation
dose, and meets the requirements of high-precision, long-term stable
ion implantation processes under advanced processes.