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Optical receiving element and producing method thereof, and optical receiving element with built-in circuit

一种光接收元件、光电转换的技术，应用在用光学方法记录/重现、电路、电气元件等方向，能够解决高电阻、降低响应速度、降低量子效率等问题，达到高响应速度、降低电阻、延长寿命的效果

Inactive Publication Date: 2007-09-19
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the light receiving portion diffusion layer 105 as shallow as about 0.1 μm or less has a very high resistance
In order to reduce the series resistance of the light-receiving element to achieve a higher response speed, it is desirable to form the light-receiving part diffusion layer 105 deeper than about 0.1 μm while avoiding a decrease in quantum efficiency

Method used

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  • Optical receiving element and producing method thereof, and optical receiving element with built-in circuit
  • Optical receiving element and producing method thereof, and optical receiving element with built-in circuit
  • Optical receiving element and producing method thereof, and optical receiving element with built-in circuit

Examples

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example 1

[0085] 1 is a cross-sectional view schematically showing the structure of a light-receiving element having a built-in circuit 20 according to a first example of the present invention. For convenience, FIG. 1 shows a portion including a photodiode region and a bipolar transistor element region of a light receiving element having a built-in circuit 20 .

[0086] A light-receiving element with a built-in circuit 20 includes: a p-type semiconductor substrate 1 formed of silicon or the like and having a resistivity of about 40 Ωcm; a p-type high-concentration buried diffusion layer 2; a p-type high-resistivity epitaxial layer 3 having a resistivity greater than or equal to about 100Ωcm; and, n-type epitaxial layer 6 having a resistivity of about 1Ωcm to 5Ωcm. Layers 2, 3 and 6 are sequentially stacked on the p-type semiconductor substrate 1 in this order.

[0087] The light receiving element with built-in circuit 20 includes a photodiode region 30 and a bipolar transistor element ...

example 2

[0117] The light receiving element with a built-in circuit according to the second example of the present invention differs from the light receiving element with a built-in circuit 20 shown in FIG. The surface is formed to a depth greater than 0.3 μm but less than or equal to about 1.2 μm (eg, 0.5 μm). The n-type impurity diffusion layer has less than about 1×10 19 cm -3 The peak impurity concentration (for example, about 8×10 18 cm -3 ). In other respects, the light receiving element with built-in circuit according to the second example is the same as the light receiving element with built-in circuit 20 .

[0118] As shown in FIG. 4, when the depth of the n-type impurity diffusion layer is about 0.5 μm or about 1.2 μm, even if the peak impurity concentration is about 1×10 20 cm -3 , the quantum efficiency will also decrease. The reason for this is that the gradient of the impurity concentration distribution is small, so the potential gradient is gentler than when the d...

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Abstract

Optical receiving element and producing method thereof, and optical receiving element with built-in circuit. A light receiving element includes a substrate; and an epitaxial layer provided on the substrate and containing an impurity diffusion layer extending from a surface of the epitaxial layer to a prescribed depth. The prescribed depth is about 0.3 mum or less. The impurity diffusion layer contains an impurity at a concentration of less than about 1x10<20>cm<-3>.

Description

technical field [0001] The present invention relates to a light receiving element, a manufacturing method thereof, and a light receiving element having a built-in circuit. Background technique [0002] A photodiode is known as one type of light receiving element. Photodiodes have a photoelectric conversion function for converting optical signals into electrical signals, and are widely used in optical pickups, optical spatial transmission devices, and the like. [0003] A photodiode performs photoelectric conversion as follows. [0004] A reverse bias voltage is applied to the PN junction formed in the semiconductor layer in the photodiode, and the depletion layer formed by applying the reverse bias voltage and the vicinity of the depletion layer are irradiated with light. As a result, carriers (photogenerated carriers) are generated in the semiconductor layer. The photogenerated carriers move to the depletion layer according to the potential gradient (built-in electric fi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/10H01L31/18G11B7/13H01L27/14
CPCH01L31/103
Inventor 夏秋和弘福岛稔彦
Owner SHARP KK