Unlock instant, AI-driven research and patent intelligence for your innovation.

Quick simulator based on static random storage and method

A static random access and memory technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of increased parasitic parameters, slow simulation speed, and increased number of devices

Inactive Publication Date: 2008-02-06
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the post-layout simulation speed of the new software is not satisfactory. There are two reasons. On the one hand, the capacity of SRAM increases rapidly; The number of devices that need to be simulated and calculated. These two reasons make those high-speed Spice simulation software have to perform more heavy formula calculations in order to obtain accurate post-simulation results, which ultimately leads to slow simulation speed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quick simulator based on static random storage and method
  • Quick simulator based on static random storage and method
  • Quick simulator based on static random storage and method

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment

[0047] The present invention has obtained application in the SRAM design process of No. Godson II CPU, and what it adopted is the SMIC 0.18um CMOS process, and we have designed a 64-bit, operating frequency is 500 megahertz, the SRAM of capacity 4Kb. In order to verify the accuracy and reliability of this method, we compared the results measured by this method with the final simulation results after the entire layout. Table 1 lists the comparison results of several typical data. At the same time, a large amount of simulation data is also compared, and the results show that the maximum deviation between the two is not more than 5%, and the simulation speed is nearly doubled each time, so that the work efficiency has been greatly improved. The entire chip has passed the tape-out verification, which fully demonstrates that the simulation test results are accurate and reliable.

[0048] Table 1 Comparison of simulation results

[0049]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to semiconductor memory technology, and is especially one kind of fast simulator based on SRAM and its simulation method. The circuit artwork structure consists of the equivalent circuit model of memory unit in the vertex and the memory units in other positions. The simulation process includes the following steps: 1. finding out and maintaining the artwork of the memory unit in the vertex in the SRAM artwork; 2. extracting corresponding equivalent circuit model for the memory unit artwork of other positions; and 3.post-simulating the whole extracted netlist of the equivalent circuit while simulating only the maintained vertex memory unit. The present invention has the feature of wide application range and may be used in designing SRAM design and other kinds of memory.

Description

technical field [0001] The invention relates to the technical field of semiconductor memory, in particular to a fast simulator and a fast simulation method based on static random access memory. Background technique [0002] Static Random Access Memory (SRAM) is widely used today in the field of portable devices and microprocessors. The design of high speed, low power consumption and large capacity of SRAM has always been a difficult problem in chip design. [0003] Since the design of SRAM basically adopts a fully customized design process, this determines that its entire design and implementation process is inseparable from a large number of transistor-level simulations. As a high-precision transistor-level simulation software, Hspice has been recognized and widely used in the industry for a long time. However, Hsipce also has defects, that is, the simulation speed is relatively slow, which makes it more suitable for simulating small and medium-sized circuits. For an SRA...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50G06F9/455H01L21/8244G11C11/41H10B10/00
Inventor 张锋周玉梅黄令仪
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI