Quick simulator based on static random storage and method
A static random access and memory technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of increased parasitic parameters, slow simulation speed, and increased number of devices
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[0047] The present invention has obtained application in the SRAM design process of No. Godson II CPU, and what it adopted is the SMIC 0.18um CMOS process, and we have designed a 64-bit, operating frequency is 500 megahertz, the SRAM of capacity 4Kb. In order to verify the accuracy and reliability of this method, we compared the results measured by this method with the final simulation results after the entire layout. Table 1 lists the comparison results of several typical data. At the same time, a large amount of simulation data is also compared, and the results show that the maximum deviation between the two is not more than 5%, and the simulation speed is nearly doubled each time, so that the work efficiency has been greatly improved. The entire chip has passed the tape-out verification, which fully demonstrates that the simulation test results are accurate and reliable.
[0048] Table 1 Comparison of simulation results
[0049]
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