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LED structure

A light-emitting diode and base-layer technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as poor conduction, increased production costs, and decreased yield

Inactive Publication Date: 2008-02-13
FORMOSA EPITAXY INCORPORATION +1
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Problems solved by technology

But if you want to use high doping concentration (n>1×10 19 cm -3 ) silicon to manufacture a low-resistance thick n-type gallium nitride contact layer. In the actual manufacturing process, it is found that inside the gallium nitride layer, it is often prone to cracks or even fracture
These phenomena not only affect the manufacturing quality of the gallium nitride layer, but also increase the difficulty of making an n-type ohmic contact electrode layer above it in the subsequent step due to the phenomenon of cracks or even fractures, making the overall electrical characteristics worse Or poor conductivity becomes waste
As far as the impact is concerned, the operating voltage of the entire component will inevitably be increased, which will increase the electrical power consumed during operation, or reduce the yield of manufacturing, and increase production costs.
In addition, silicon (Si) is heavily doped (n>1×10 19 cm -3 ) As a result of the thick n-type GaN contact layer, it is also easy to form point defects (pin holes), which will cause leakage current in device operation and deteriorate the overall diode characteristics

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[0025] FIG. 1 is a first embodiment of the structure of a gallium nitride-based light-emitting diode according to the present invention. The first embodiment of the gallium nitride-based light-emitting diode structure of the present invention includes: a substrate 11, a double buffer layer (double buffer layer) 12, an n-type gallium nitride (GaN) layer 13, and a short-period superlattice digital contact layer 14 , an active light emitting layer 15 , a p-type cladding layer 16 , and a contact layer 17 .

[0026] The material of the substrate 11 is alumina single crystal (Sapphire). The double buffer layer 12 on the substrate 11 includes: a first buffer layer (first buffer layer) 121 and a second buffer layer (second buffer layer) 122 . The first buffer layer 121 located on the substrate 11 is made of aluminum gallium indium nitride (AlGaN) 1-x-y Ga x In y N), wherein 0≤X<1, 0≤Y<1. The second buffer layer 122 located on the first buffer layer 121 is made of silicon nitride ...

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Abstract

The invention includes baseboard, double buffering layer, N type GaN layer, short cycle super lattice digital contact layer, active luminous layer, P type coated layer, and contact layer. When the thick GaN contact layer with high doping concentration and low resistance is made by using the invention, crazing and din holes phenomena can not occur in thick GaN layer.

Description

technical field [0001] The invention relates to the structure of light-emitting diodes, in particular to the structure of GaN-based light-emitting diodes with low-resistance thick n-type GaN-based contact layers. Background technique [0002] In the prior art, an InGaN / GaN multiquantum well (MQW) light-emitting diode uses n-type gallium nitride (GaN) as an n-type contacting layer. But if you want to use high doping concentration (n>1×10 19 cm -3 ) silicon to manufacture a low-resistance thick n-type gallium nitride contact layer. In the actual manufacturing process, it is found that inside the gallium nitride layer, it is often prone to cracks or even breakage. These phenomena not only affect the manufacturing quality of the gallium nitride layer, but also increase the difficulty of making an n-type ohmic contact electrode layer above it in the subsequent step due to the phenomenon of cracks or even fractures, making the overall electrical characteristics worse Or poo...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/04H01L33/12
Inventor 涂如钦武良文游正璋温子稷简奉任
Owner FORMOSA EPITAXY INCORPORATION