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Laser assisted direct imprint lithography

A direct, laser-irradiated technology with applications in optics, nanotechnology, nanotechnology, etc., that can solve problems such as limited resist or polymer use and handling

Inactive Publication Date: 2008-03-05
PRINCETON UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method removes the limitation on resolution caused by the wavelength of light, however, is still limited by the use and handling of resists or polymers

Method used

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  • Laser assisted direct imprint lithography
  • Laser assisted direct imprint lithography
  • Laser assisted direct imprint lithography

Examples

Experimental program
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Effect test

Embodiment

[0039] A series of experiments were carried out using stamps with the following three patterns: (1) a grid with a line width of 140 nm, a depth of 110 nm and a period of 30 nm; (2) a line with a width of 10 nm and a depth of 15 nm, which is formed due to burial in reactive ion etching during impression making; and (3) a rectangle with a length and width of several tens of micrometers and a depth of 110 nanometers. All three patterns were imprinted directly into silicon using the same LADI method.

[0040]First, a quartz stamp is brought into contact with a silicon substrate as described above. Two large platens are used to provide pressure for the impression to press against the substrate. Place the silicon wafer on the underlying plate with the stamp on top of the wafer. The upper plate, also made of fused silica and therefore transparent to the laser beam, is placed on top of the impression. The two plates are pressed together by increasing the pressure provided by the sc...

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Abstract

In accordance with the invention, features can be directly imprinted into the surface of a solid substrate. Specifically, a substrate is directly imprinted with a desired pattern by the steps of providing a mold (20) having a molding surface (21) to imprint the pattern, disposing the molding surface adjacent or against the substrate (24) surface (25) to be imprinted, and irradiating the substrate surface with radiation to soften or liquefy the surface. The molding surface is pressed into the softened or liquefied surface to directly imprint the substrate. The substrate can be any one of a wide variety of solid materials such as semiconductors, metals, or polymers. In a preferred embodiment the substrate is silicon, the laser is a UV laser, and the mold is transparent to the UV radiation to permit irradiation of the silicon workpiece through the transparent mold. Using this method, applicants have directly imprinted into silicon large area patterns with sub-10 nanometer resolution in sub-250 nanosecond processing time. The method can also be used with a flat molding surface to planarize the substrate.

Description

[0001] Statement of Government Interest [0002] This invention was made with Government support under DARPA (N66001-98-1-8900) and ONR (N00014-01-1-0741). The government has certain rights in this invention. Cross References to Related Applications [0003] This application claims priority to US Provisional Patent Application 60 / 364,653, filed March 15, 2002, entitled "Method for Directly Imprinting Microstructures in Materials," by Stephen Chou. [0004] This application is also a continuation-in-part of U.S. Patent Application Serial No. 10 / 244,276, filed September 16, 2002, by Stephen Chou, entitled "Lithographic Method for Molding Patterns with Nanoscale Patterns," which in turn was filed by A continuation of U.S. Application 10 / 064,594, filed October 29, 2001 by Stephen Chou, which in turn claims U.S. Patent Application Serial No. 09 / 107,006, filed June 30, 1998 by Stephen Chou (now October 2001 30, published U.S. Patent 6,309,580), which in turn claims U.S. Patent Appl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/027G03F7/00H01L21/304
CPCB82Y10/00H01L21/304G03F7/0002B82Y40/00
Inventor 斯蒂芬·郁·周
Owner PRINCETON UNIV