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Method for manufacturing low temperature multicrystalline silicon thin film transistor

A technology of thin-film transistors and low-temperature polysilicon, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as the inability to improve electron mobility and difficulties of thin-film transistors

Inactive Publication Date: 2008-05-28
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Like this, the liquid amorphous silicon 13c will produce homogeneous nucleation (homogeneous nucleation), gradually have the polysilicon seed crystal 14e that distributes evenly and the same particle size to appear, finally the liquid amorphous silicon 13c will homogeneously crystallize to form a crystal A polysilicon layer with a small grain size cannot improve the electron mobility of a thin film transistor.
Therefore, the laser annealing method will Figure 1A In the process of transforming the amorphous silicon layer 13 into a polysilicon layer 14, an optimum depth (superlateral growth, SLG) should be found so that the polysilicon seeds can be distributed on the unmelted amorphous silicon layer with a sufficient distance from each other. , it is quite difficult to

Method used

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  • Method for manufacturing low temperature multicrystalline silicon thin film transistor
  • Method for manufacturing low temperature multicrystalline silicon thin film transistor
  • Method for manufacturing low temperature multicrystalline silicon thin film transistor

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Embodiment 1

[0020] Please also refer to figure 2 and Figure 3A ~ 3K , figure 2 It is a partial flow diagram of a manufacturing method of a low temperature polysilicon (LTPS) thin film transistor (thin film transistor, TFT) according to Embodiment 1 of the present invention, Figure 3A ~ 3K It is a flow sectional view of the manufacturing method of the low-temperature polysilicon thin film transistor according to the first embodiment of the present invention. First, in step 40, a substrate 111, such as a glass substrate or a plastic substrate, is provided. Next, enter step 50, form a buffer layer (buffer layer) 112 on the substrate 111, as Figure 3A shown. Wherein, the buffer layer 112 is, for example, a silicon dioxide (silicon dioxide, SiO 2 )layer. Then, enter step 60 , forming a low surface free energy material 140 on the surface of the buffer layer 112 . Next, enter step 70, form a first amorphous silicon (amorphous silicon, α-Si) layer 113 on the low surface free energy ma...

Embodiment 2

[0028] Please refer to Figures 4A-4D , which is a partial flow sectional view of the manufacturing method of the low-temperature polysilicon thin film transistor according to the second embodiment of the present invention. First, in Figure 4A In this method, a substrate 211 is provided, such as a glass substrate or a plastic substrate, and a buffer layer 212 is formed on the substrate 211 . Wherein, the buffer layer 212 is, for example, a silicon dioxide layer. Then, treat the surface of the buffer layer 212 with hydrogen plasma (hydrogen plasma), and form a first amorphous silicon layer 213 on the surface 212 of the buffer layer, as Figure 4B shown. Wherein, the thickness of the first amorphous silicon layer 213 is about 50 Angstroms . During the hydrogen plasma treatment of the surface of the buffer layer 212 , the hydrogen plasma changes the polar chemical bonds on the surface of the buffer layer 212 into non-polar chemical bonds.

[0029] Then, the first amorphou...

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Abstract

The method includes following steps: providing base plate, forming buffer layer on base plate, forming material with low surface free-energy on the buffer layer, and forming first amorphous silicon layer on the material with low surface free-energy; next, first amorphous silicon layer is meltened fully through method of laser tempering so that first liquid amorphous silicon layer forms even distributed several crystal seeds of polysilicon on material with low surface free-energy; then, forming second amorphous silicon layer on material with low surface free-energy in order to cover crystal seeds of polysilicon; finally, second amorphous silicon layer is meltened fully through method of laser tempering so that based on crystal seeds of polysilicon second liquid amorphous silicon layer forms polysilicon layer.

Description

(1) Technical field [0001] The present invention relates to a method for manufacturing a thin film transistor (TFT), and in particular to a method for manufacturing a low temperature polysilicon (LTPS) thin film transistor. (2) Background technology [0002] In today's era of rapid technological development, display panels have been widely used in portable electronic devices such as notebook computers, personal digital assistants, and mobile phones. Among them, the display panel can be classified into a non-polysilicon (amorphous silicon, α-Si) thin film transistor (thin film transistor, TFT) display panel and a low temperature polysilicon (LTPS) TFT display panel. The biggest difference between the LTPS TFT display panel and the α-Si TFT display panel is that the LTPS TFT display panel uses laser annealing (Laser Annealing) to convert the α-Si layer into a polysilicon layer, which greatly improves the electron mobility of the thin film transistor. ). Therefore, the panel ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/20H01L21/324H01L29/786
Inventor 曹义昌
Owner AU OPTRONICS CORP