Surface processing method, manufacturing method of silicon epitaxial wafer and silicon epitaxial wafer

Abstract

To grow a silicon epitaxial layer on a principal plane of a silicon single crystal substrate by vapor phase epitaxy at a rapid growth speed while suppressing the occurrence of auto-dope, particles, and cracks. In a method of manufacturing a silicon epitaxial wafer (1), first of all, a silicon oxide film (15) is formed on a rear face (14) of the silicon single crystal substrate (10). Next, with the rear face (14) of the silicon single crystal substrate (10) covered and part of the periphery (16) of the silicon single crystal substrate (10) exposed over a liquid level, the silicon single crystal substrate (10) is dipped in a hydrofluoric acid, leaving a peripheral oxide film (110) extended from the rear face (14) of the silicon single crystal substrate (10) to the most outer edge (X) of the periphery (16) only in part of the periphery (16). Then, with the remaining peripheral oxide film (110) abutting against a side face of a spot facing portion (33) of a susceptor (32), the silicon epitaxial layer (13) is grown on the principal plane (12) of the silicon single crystal substrate (10) by vapor growth epitaxy.

Description

technical field [0001] The invention relates to a surface treatment method of a single crystal silicon substrate, a manufacturing method of a silicon epitaxial wafer and a silicon epitaxial wafer. Background technique [0002] Conventionally, as an apparatus for vapor-phase-growing a silicon epitaxial layer on the main surface of a single-crystal silicon substrate, for example, a cylinder-type vapor-phase growth apparatus has been used. This vapor phase growth apparatus has a pedestal in the shape of a polygonal pyramid inside a reaction furnace. A spot facing portion is formed on the outer peripheral surface of the susceptor, and the single crystal silicon substrate is placed therein in an upright state when performing vapor phase growth. [0003] But, when adopting this vapor phase growth apparatus to vapor phase grow the silicon epitaxial layer of high resistivity on the main surface of the single crystal silicon substrate of low resistivity, the dopant in the single cry...

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Problems solved by technology

[0006] And adopt the method of above-mentioned Japanese Patent Application Laid-Open No. 8-279470, although the generation of crack can be prevented, but because the growth rate of silicon epitaxial layer is low, the productivity of silicon epitaxial wafer will reduce significantly

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