Unlock instant, AI-driven research and patent intelligence for your innovation.

Epitaxial growth method

A technology of epitaxial growth and epitaxial layer, applied in the field of epitaxial process, can solve the problems of low deposition rate and seldom used, etc., achieve high production efficiency, and suppress the effect of epitaxial self-doping phenomenon

Inactive Publication Date: 2012-05-16
SHANGHAI HUA HONG NEC ELECTRONICS
View PDF5 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Silicon tetrachloride is usually deposited at a high temperature of about 1200°C, and this process is rarely used at present.
Silane is usually used for low-temperature epitaxy, and the growth temperature is 600-950°C; it is usually used for decompression epitaxy, and the pressure is 20-100 Torr; especially for the growth of germanium-silicon epitaxy, its deposition rate is low, and it is suitable for growing thin epitaxy. Usually less than 5000

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Epitaxial growth method
  • Epitaxial growth method
  • Epitaxial growth method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] see figure 1 , the epitaxial growth method of the present invention comprises the following steps:

[0015] Step 1, choose SiH 4 As silicon source gas, the first epitaxial layer is grown under low temperature and reduced pressure conditions by VPE process. The "low temperature" refers to 600-950°C, preferably 650-850°C. The "decompression" refers to 20-200 Torr, preferably 20-100 Torr. The carrier gas for this step of epitaxial growth is hydrogen, and the flow rate of hydrogen is 15-45 slm. The thickness of the grown first epitaxial layer is 500-5000 , preferably 500-1500

[0016] During this step of epitaxial growth, due to the lower reaction temperature, the outdiffusion of impurities in the silicon wafer is less. In this way, after the first epitaxial layer is grown on the surface of the silicon wafer, the following second epitaxial process is performed, and the self-doping phenomenon will be better suppressed, thereby reducing the microscopic self-doping ph...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an epitaxial growth method, which comprises the following steps: step 1, selecting silane as silicon source gas, and growing a first epitaxial layer through a gas phase epitaxial process, wherein the reaction temperature is 600-950 DEG C, the pressure is 20-200Torr, carrier gas is hydrogen, the flow of the hydrogen is 15-45slm, and the thickness of the first epitaxial layer is 500-5000; and step 2, selecting dichlorosilane as silicon source gas, and growing a second epitaxial layer through a gas phase epitaxial process, wherein the reaction temperature is 1000-1100 DEG C, the pressure is 20-200Torr, carrier gas is hydrogen, and the flow of the hydrogen is 20-60slm. According to the epitaxial growth method disclosed by the invention, the phenomenon of epitaxy autodoping can be better restrained, and higher production efficiency is obtained.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to an epitaxy process. Background technique [0002] Silicon epitaxy is widely used in bipolar devices, CMOS, silicon-based BiCMOS, germanium-silicon BiCMOS and BCD devices. The resistivity, film thickness and uniformity of the epitaxial layer have an important influence on the performance of semiconductor devices. The adjustment of the resistivity of the epitaxial layer is realized by doping impurities in it. For example, p-type epitaxy is usually doped with boron (B), and n-type epitaxy is usually doped with phosphorus (P) or arsenic (As). The amount of doped impurities determines the size of the resistivity. [0003] However, there is more or less self-doping during the epitaxial process, and the resulting self-doping effect (Auto-doping effect) is that the epitaxial layer is doped with non-intentional dopants during the epitaxial growth process. doping), which will ha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205H01L21/02C30B25/14C30B25/16
Inventor 缪燕
Owner SHANGHAI HUA HONG NEC ELECTRONICS