Unlock instant, AI-driven research and patent intelligence for your innovation.

Conductor arrangement layering structure formed in contact hole, manufacturing method of conductor arrangement layering structure and display device having said conductor arrangement layering

A layered structure and display device technology, applied in the direction of layered products, lighting devices, electrode devices and related components, can solve problems such as burrs and display device defects

Inactive Publication Date: 2008-07-23
SANYO ELECTRIC CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Also, as explained above, burrs are generated at the broken part
In particular, since the cathode of the organic EL element is formed on the entire surface of the drain electrode 253 and the element electrode 254, a burr growing on the protective metal layer will cause a short circuit between these electrodes and the cathode of the organic EL element, resulting in a defect in the display device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Conductor arrangement layering structure formed in contact hole, manufacturing method of conductor arrangement layering structure and display device having said conductor arrangement layering
  • Conductor arrangement layering structure formed in contact hole, manufacturing method of conductor arrangement layering structure and display device having said conductor arrangement layering
  • Conductor arrangement layering structure formed in contact hole, manufacturing method of conductor arrangement layering structure and display device having said conductor arrangement layering

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0041] The wiring layered structure according to the first embodiment of the present invention is used to drive TFTs of a display device including organic EL elements. figure 1 is a plan view showing part of the display device. The display device 100 includes a figure 1 The dashed lines in the figure indicate the display area 110 on the insulating substrate 10, and the peripheral driving circuits 120 and 130 for driving the TFTs in the display area. A plurality of scan lines G1 to Gm are connected to the peripheral driving circuit 120 , and a plurality of data lines D1 to Dn are connected to the peripheral driving circuit 130 .

[0042] refer to figure 1 , displayed in the display area 110 is a circuit diagram for a display pixel near the intersection of the scan line Gk and the data line Dk. The display pixel includes an organic EL element 60, a first TFT 30, a second TFT 40 and a capacitor C.

[0043] The gate electrode in the first TFT 30 is connected to the scanning...

no. 2 example

[0067] Figure 4 is a schematic diagram for explaining the second embodiment of the present invention.

[0068] In the first embodiment, the description is directed to the case where the second protective metal layer 174 is formed thicker than the gate insulating film 12 . However, in this second embodiment, the second protective metal layer 174 is formed such that the film thickness d5 of the second protective metal layer 174 is greater than the distance d4 between the tip of the arm and the gate insulating film 12 under the arm. Thus, even when an overhang is formed on the boundary between the first interlayer insulating film 13 and the gate insulating film 12, the second protective metal layer 174 will be formed without any breakage. As a result, the occurrence of burrs growing from the drain electrode 53 and the source electrode 54 can be suppressed. Therefore, as shown in FIG. 2, when the cathode 67 of the organic EL element 60 is formed on the entire surface of the dra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A contact hole is formed, by etching that uses buffered hydrofluoric acid, in a gate insulating film made of SiO2 and an interlayer insulating layer, formed on the gate insulating film, which is made of SiN. In this contact hole, there is formed an electrode which includes: a first protective metal layer made of a refractory metal; a wiring layer, formed on the first protective metal layer, which is made of a metal whose resistance is lower than that of the refractory metal; and a second protective metal layer, made of a refractory metal, which is formed thicker than the gate insulating film.

Description

technical field [0001] The invention relates to a wiring layered structure, a manufacturing method of the wiring layered structure, and a display device including the wiring layered structure. Background technique [0002] Display devices using thin film transistors (hereinafter referred to as TFTs) as switching elements have appeared in the market recently. As a display device replacing CRT and LCD, an organic electroluminescent (EL) display device employing a current-driven organic light emitting diode (hereinafter referred to as OLED) functioning as a light emitting element has currently shown great attraction. In display devices employing organic electroluminescent (EL) elements, TFTs are also used to drive the organic EL elements. [0003] Figure 5 It is a cross-sectional view of a TFT in a display device using an organic EL element. The TFT 200 has a laminated structure in this order, an insulating substrate made of quartz glass or the like, an active layer 243 made...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L51/50B32B3/00G09G3/20H01J29/46H01L21/28H01L21/336H01L21/768H01L27/01H01L27/32H01L29/417H01L29/45H01L29/786H05B33/14
CPCH01L29/66757H01L27/3244H01L29/458H01L29/41733Y10T428/12528Y10T428/24917H10K59/12H05B33/00
Inventor 長谷川勲鈴木浩司
Owner SANYO ELECTRIC CO LTD