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Display device

A technology for display devices and atoms, applied in identification devices, static indicators, optics, etc., can solve problems such as easy oxidation, achieve the effects of reducing processing costs, maintaining display quality, and reducing the number of steps

Inactive Publication Date: 2008-08-20
KOBE STEEL LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] One of the problems pointed out for Cu metal and Cu alloys is that they are prone to oxidation

Method used

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Embodiment

[0045] The constitution, function, and effect of the present invention are specifically described with reference to examples, but the present invention is by no means limited by the following examples.

[0046] Example

[0047] On a glass substrate (#1737, produced by Corning Co., size for evaluation of resistivity and heat resistance: 50.8 mm diameter × 0.7 mm thickness; size for evaluation of contact resistivity: 101.6 mm diameter × 0.7 mm thickness ), using the DC magnetron sputtering method (base pressure: 0.27×10 -3 Pa or lower; argon pressure: 0.27Pa; argon flow rate: 30sccm; sputtering power: DC200W; distance between electrodes: 50.4mm; substrate temperature: room temperature), using a composite sputtering target and sputtering equipment (HSM- 552, produced by Shimazu Seisakusho) each having a thickness of 300 nm to form a thin film of a sample in which pieces of alloy elements (size: 5 mm×5 mm×1 mm thick) shown in the following Tables 1 to 13 are respectively arranged...

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Abstract

A display device in which interconnection-electrode comprising a Cu alloy film having a lower electrical resistivity than Al alloy and a transparent conductive film are directly connected not by way of a refractory metal thin film, wherein the Cu alloy film contains Zn and / or Mg in a total amount from 0.1 to 3.0 at %, or Ni and / or Mn in a total amount from 0.1 to 5 at %, thereby enabling the direct connection at low resistivity between the Cu alloy film and the transparent electrode without using a barrier metal, and giving high display quality in a case of application, for example, to a liquid crystal display.

Description

technical field [0001] The present invention relates to a thin film display device, and more particularly, the present invention relates to a novel display device including a low-resistivity interconnection portion (as a constituent element) having a structure in which a transparent conductive film and a Cu alloy The films are directly connected, and this structure is used, for example, in active and passive matrix type flat panel displays (FPDs), such as liquid crystal displays, reflective films, optical parts, and the like. Background technique [0002] For FPDs, including liquid crystal displays, interconnection materials with low resistivity have been increasingly required in recent years. In particular, in liquid crystal displays, there is a strong need to reduce the resistivity of gate lines and signal lines (power and drain lines) of thin film transistors (TFTs) for driving pixels, and resistivity such as Al-Nd has been used to date. Hot Al alloys. [0003] However,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/1343G02F1/133G09F9/00
Inventor 钉宫敏洋富久胜文日野绫高木胜寿
Owner KOBE STEEL LTD