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Detecting pixel matrix, photoelectric detector and its manufacture method

A photodetector and detection pixel technology, applied in the direction of electric solid-state devices, circuits, electrical components, etc., can solve the problems of not reducing electric intermodulation, not preventing electric load transmission, etc., achieving speed and enhancing the efficiency of photoelectric conversion The effect of power and image resolution improvement

Inactive Publication Date: 2008-08-20
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Also, despite this, the optical mask does not prevent electrical loads from propagating through the intrinsic semiconductor layer 14 between adjacent pixels.
Therefore, although this technology reduces optical intermodulation, it does not reduce electrical intermodulation

Method used

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  • Detecting pixel matrix, photoelectric detector and its manufacture method
  • Detecting pixel matrix, photoelectric detector and its manufacture method
  • Detecting pixel matrix, photoelectric detector and its manufacture method

Examples

Experimental program
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Embodiment Construction

[0061] Figure 3 shows a cross-sectional view of an imager according to the invention.

[0062] A dielectric layer 18 is provided on a substrate 17 in which electrical connection portions 19a, 19b, 19c and 19d are formed, wherein the substrate 17 may be, for example, a CMOS type readout circuit. The electrical connections 19a, 19b, 19c and 19d are connected to contact stubs (not shown in Figure 3) of the reading circuit. A plurality of detection pixels are formed on the surface of the dielectric layer 18 . Each detection pixel includes a photosensitive semiconductor region 22 surrounded by two electrodes. The conductive diffusion barrier region 20 (e.g. TiN layer) and the conductive contact 21 (e.g. n-doped semiconductor layer) constitute a first electrode which is connected to the electrical connection portion (19b, 19d) inserted in the dielectric layer. formed in contact. The semiconductor region 22 is a photosensitive region made of, for example, non-doped amorphous silic...

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PUM

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Abstract

The invention relates a detecting pixel matrix and a photoelectric detector comprising a detecting pixel matrix and the circuit (17) of a reader of charges which are detected by the detecting pixel of said matrix. A detecting pixel comprises a photosensitive semiconductive area (22) consisting of a first face covered by a first electrode (26) and a second face which is oppositely arranged with respect to the first face and covered by a second electrode (20, 21). The first electrode (26) is provided with a metallic pattern capable of collecting electric charges generated by the detecting pixel. Said invention can be used, for example for producing sensors for scanners and photo cameras or for digital cameras or biosensors.

Description

technical field [0001] The invention relates to a matrix of detection pixels and a photodetector comprising a matrix of detection pixels and a readout circuit for the load generated by the detection pixels of the matrix. [0002] The invention also relates to a process for manufacturing a matrix of detection pixels, and a process for manufacturing a readout circuit comprising a matrix of detection pixels and a load generated by the detection pixels of the matrix. [0003] The invention is applied, for example, to form sensors used in scanners, optoelectronic devices and digital cameras, and to form microchips specifically for DNA sequences. [0004] A photodetector according to the invention allows, for example, to form a glare resistant imager which is integrated monolithically into the surface of a CMOS (Complementary Metal Oxide Semiconductor) technology readout circuit. Background technique [0005] Current fabrication techniques for imagers placed monolithically on a C...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H01L31/0224
CPCH01L27/1465H01L31/022408H01L27/14643
Inventor 希里尔·圭得贾诺贝特·穆西
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES