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Semiconductor device, circuit and method with synchronous input and output data

A semiconductor, output buffer technology, applied in digital memory information, instruments, static memory, etc., can solve problems such as large area

Inactive Publication Date: 2008-09-03
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Device 100 requires a relatively large area due to the inclusion of two feedback loops with replicated circuits

Method used

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  • Semiconductor device, circuit and method with synchronous input and output data
  • Semiconductor device, circuit and method with synchronous input and output data
  • Semiconductor device, circuit and method with synchronous input and output data

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Embodiment Construction

[0055] As previously stated, the present invention provides devices, circuits and methods capable of synchronizing input data sets into a memory cell array and outputting data sets into a device. Synchronization is performed using an internal clock signal, both of which are derived from a single-delay feedback loop. The present invention will now be described in detail.

[0056] Referring now to FIG. 5, there is shown a memory device 500 made in accordance with one general embodiment of the present invention.

[0057] Device 500 includes a memory cell array (MCA) 502 for storing data. It also receives an input clock signal CLK for synchronizing its operation.

[0058] Device 500 also includes a set of data input (DIN) latches 504 , and a set of DIN buffers 505 . Data received at DIN buffer 505 is latched by DIN latch 504 to input the data into MCA 502 as DATA-IN.

[0059] In addition, device 500 also includes a set of data output (DOUT) buffers 507 and a set of DOUT buffer...

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Abstract

Devices, circuits and methods synchronize the inputting and outputting of groups of data into a memory cell array and out of a device. Synchronizing is performed by internal clock signals, both of which are derived from a single delay feedback loop.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Priority Document No. P2002-01251 filed with the Korean Industrial Property Office on January 9, 2002, which is hereby incorporated by reference. technical field [0003] This invention relates to the field of semiconductor memory devices, and more particularly to circuits for controlling the clock delay or phase of input and output data into and out of the memory device. Background technique [0004] Semiconductor devices, especially memory devices, are used to store data. Data bits are stored by entering ("writing") the data bits into one or more arrays of memory cells. It is then output ("read") from that memory cell. [0005] Writes and reads data to and from the array of memory cells in the sync bit group. Sometimes such a set of data forms one byte. [0006] Synchronization of these operations is accomplished by using a single clock signal throughout the device. A...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/4096G11C7/22G11C11/413G11C7/10G11C8/00
CPCG11C7/1066G11C7/106G11C7/222G11C7/1057G11C7/1087G11C7/1078G11C7/1051G11C8/00
Inventor 全永铉金哲洙宋镐永
Owner SAMSUNG ELECTRONICS CO LTD