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Retainer tectosome, insulation tectosome and heating arrangement of heater

A technology for maintaining structure and heating device, applied in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., and can solve problems such as electrical short circuit and mutual welding

Active Publication Date: 2009-01-14
KOKUSA ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] On the other hand, if the temperature of the heating element rises, it will expand due to thermal expansion
In addition, if the heating element is used for a long time, it also tends to elongate
[0013] And, if the heating element is elongated, the interval between the two ends of the heating element becomes narrow, so the interval between a pair of power supply parts of the heating element becomes narrow, and eventually they come into contact, thereby causing an electrical short circuit or mutual contact when the temperature is high. welding

Method used

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  • Retainer tectosome, insulation tectosome and heating arrangement of heater
  • Retainer tectosome, insulation tectosome and heating arrangement of heater
  • Retainer tectosome, insulation tectosome and heating arrangement of heater

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Embodiment Construction

[0039] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0040] In this embodiment, the heating element holding structure according to the present invention is provided in a CVD apparatus (batch-type vertical hot-wall diffusion CVD apparatus) which is one embodiment of the substrate processing apparatus according to the present invention. It is used for the heater unit which is one embodiment of the heating apparatus concerning this invention.

[0041] As one embodiment of the substrate processing apparatus of the present invention, a CVD apparatus such as figure 1 As shown, there is provided an upright reaction tube 11 arranged vertically and fixedly supported, and the reaction tube 11 includes an outer tube 12 and an inner tube 13 .

[0042] Outer tube 12 uses quartz (SiO 2 ) and integrally formed into a cylindrical shape, the inner tube 13 uses quartz (SiO 2 ) or silicon carbide (SiC) integrally formed into a cylindri...

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PUM

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Abstract

A heating element holding structure is used for preventing a pair of power feeding devices of the heating element from being short-circuited or deposited due to welding. This structure is composed of a heat insulating block (36) formed cylindrically by a heat insulating material, a heating element (42) equipped with a pair of power feeding devices (45, 46), and a heater unit (30) with the heating element (42) arranged at the inner side of a mounting groove (40) of the heat insulating block (36); a pair of power feeding devices (45, 46) of the heating element (42) is held by an external insulator (52) and an inner insulator (55), and a partition wall (58) is built between the power feeding devices (45, 46) of the inner insulator (55). In this way, even if the heating element (42) extends for heat expansion or deterioration with age, the partition wall (58) prevents a pair of power feeding devices (45, 46) from contacting with each other, and consequently neither heating element short-circuit nor adhesion does not take place.

Description

technical field [0001] The present invention relates to a holding structure for a heating element, an insulating structure, a heating device, and a substrate processing device, and particularly relates to a technique for holding a pair of power supply parts of a heating element, such as a semiconductor integrated circuit device (hereinafter referred to as IC) assembled therein. CVD equipment for depositing insulating films, metal films, and semiconductor films on wafers (hereinafter referred to as wafers), oxide film forming equipment, diffusion equipment, and reflow for carrier activation and planarization after ion implantation It is a technology that is effectively used in semiconductor devices such as heat treatment equipment (furnace) used in heat treatment (thermal treatment) such as (reflow) and annealing. Background technique [0002] In the IC manufacturing method, a batch-type vertical hot-wall diffusion CVD apparatus is widely used when performing film formation p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/205H01L21/22H01L21/324C23C16/00
CPCC23C16/46H01L21/324
Inventor 村田等杉浦忍小杉哲也
Owner KOKUSA ELECTRIC CO LTD