Method for measuring silicon slice extension linear defect

Abstract

The present invention discloses a method of determining epitaxial linear defects of silicon wafers, which includes procedures below: Before growth and forming of a thin epitaxial film of a silicon wafer, a plurality of points are selected to measure curvature radius of a substrate for the thin film. After epitaxial growth, thickness of the thin epitaxial film is formed. After the thin epitaxial film is formed, the curvature radius of the substrate is measured. Based on the curvature radius of the substrate and thickness of the thin epitaxial film and the curvature radius of the substrate after the film is formed, epitaxial stress of the silicon wafer is calculated. Epitaxial stress variation of the silicon wafer determines whether a linear defect exists. With a common stress measuring instrument in a semiconductor plant, the present invention measures stress of the silicon wafer after epitaxial growth to determine whether a linear defect exists, thus bringing convenience and accuracy.

Description

technical field [0001] The invention relates to a measurement method in the semiconductor manufacturing process, in particular to a method for measuring defects in silicon wafer epitaxy. Background technique [0002] In the semiconductor manufacturing process, when the growth epitaxy temperature distribution of the silicon wafer is not uniform, defects will be generated at the level or vertical of the silicon wafer and the notch. At the same time as the linear defect (Slip) is generated, the stress accumulated during the growth will be released at the defect. In the existing technology, the methods for measuring the defects at the growth epitaxy of the silicon wafer mainly include: [0003] Visual inspection method, that is, inspection of epitaxial surface line defects under strong light, this method cannot perceive subtle or internal defects, and varies with operators; [0004] Using a particle testing machine for inspection, this method is also unable to perceive interna...

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Problems solved by technology

[0003] Visual inspection method, that is, inspection of epitaxial surface line defects under strong light, this method cannot perceive subtle or internal defects, and varies with operators;

[0004] Using a particle testing machine for inspection, this method is also unable to perceive internal defects, and the new particle testing instrument that can sense internal defects is more expensive;

[0005] Use chromic acid to etch the epitaxial wafer, use the same etching rate at the defect and non-defect areas, and observe the defects through the epitaxial residue. This method will cause damage to the silicon wafer and takes a long time.

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