Stack structure for metal inlay, forming method and metal inlay method thereof

Abstract

The forming method for a stack structure of mosaic metal comprises: forming a doped dielectric layer on the substrate, treating the layer to make the doping concentration on top less than other; then, forming a metal hard mask layer on top. This invention can reduce the reaction of doped material and mask layer.

Description

technical field [0001] The present invention relates to a manufacturing method of a semiconductor element, in particular to a stack structure of a metal-containing hard mask layer for damascene, its forming method, and a corresponding damascene process, which can reduce the number of metal hard masks and other reaction between dopants in the underlying dielectric layer. Background technique [0002] With the advancement of semiconductor technology, the size of semiconductor elements is also continuously reduced, and enters the field of Deep Sub-Micron. When the integration of integrated circuits increases, the surface of the chip cannot provide enough area to make the required interconnection (Interconnect). Design becomes the way VLSI technology must adopt. [0003] In the process of multilayer metal interconnection, a thicker photoresist layer is generally required to avoid excessive consumption of the photoresist layer during the etching process of the dielectric layer....

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Problems solved by technology

However, in the aforementioned method, there may be a reaction between the dopant in the dielectric layer and the metal layer, thereby affecting the yield of the process

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