Stack structure for metal inlay, forming method thereof and metal inlay method

Abstract

The forming method for a stack structure of mosaic metal comprises: forming a doped dielectric layer on the substrate, treating the layer to make the doping concentration on top less than other; then, forming a metal hard mask layer on top. This invention can reduce the reaction of doped material and mask layer.

Description

technical field [0001] The present invention relates to a manufacturing method of a semiconductor element, in particular to a stack structure of a metal-containing hard mask layer for damascene, its forming method, and a corresponding damascene process, which can reduce the number of metal hard masks and other reaction between dopants in the underlying dielectric layer. Background technique [0002] With the advancement of semiconductor technology, the size of semiconductor elements is also continuously reduced, and enters the field of Deep Sub-Micron. When the integration of integrated circuits increases, the surface of the chip cannot provide enough area to make the required interconnection (Interconnect). Design becomes the way VLSI technology must adopt. [0003] In the process of multilayer metal interconnection, a thicker photoresist layer is generally required to avoid excessive consumption of the photoresist layer during the etching process of the dielectric layer....

AI Technical Summary

Problems solved by technology

However, in the aforementioned method, there may be a reaction between the dopant in the dielectric layer and the metal layer, thereby affecting the yield of the process

Images