Semiconductor device with parallel plate trench capacitor

Abstract

A semiconductor device (10) is formed on a semiconductor substrate (12) whose surface (24) is formed with a trench (18). A capacitor (20) has a first plate (22) formed over the substrate surface with first and second portions lining first and second sidewalls (25) of the trench, respectively. A second plate (35, 38) is formed over the first plate and extends into the trench between the first and second portions.

Description

technical field [0001] The present invention relates generally to semiconductor devices, and more particularly to integrated circuits formed with high frequency bypass capacitors. Background technique [0002] Manufacturing mobile phones and other wireless communication devices requires integrated circuits with a large number of passive components to reduce production costs and / or physical size of the communication devices. A separate class of passive components is the bypass capacitor, which is connected between the power supply terminals to eliminate voltage spikes and other disturbances to the power supply and also acts as a low-pass filter. [0003] To date, the manufacture of many semiconductor devices has had difficulties integrating bypass capacitors onto semiconductor device die and other components due to high capacitance values ​​or low performance after integration. In mobile phones and other wireless communication devices, bypass capacitors must have a capacitan...

AI Technical Summary

Problems solved by technology

Attempts to integrate bypass capacitors resulted in components that took up a large amount of die area, which resulted in large equivalent series resistance (ESR) and consequently low frequency response

Also, the die area adds an expense to making the capacitor

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