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Electrostatic discharge protective circuit using base trigger silicon rectifier

A technology of electrostatic discharge protection and silicon-controlled rectifiers, which is applied in the direction of emergency protection circuit devices, emergency protection circuit devices, circuits, etc. used to limit overcurrent/overvoltage, can solve problems such as limitations, achieve ESD current discharge, and save layout Effect of area, fast ESD current

Inactive Publication Date: 2009-04-22
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, most of the above-mentioned ESD protection circuits designed using conventional SCR components have some disadvantages, and cause many limitations when they are manufactured in advanced CMOS integrated circuits.

Method used

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  • Electrostatic discharge protective circuit using base trigger silicon rectifier
  • Electrostatic discharge protective circuit using base trigger silicon rectifier
  • Electrostatic discharge protective circuit using base trigger silicon rectifier

Examples

Experimental program
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Embodiment Construction

[0086] Please refer to Figure 5 , Figure 5 It is a schematic diagram of the basic concept of applying the P-STSCR element 104 to the ESD input or output protection circuit 100 of the present invention. Such as Figure 5 As shown, the ESD protection circuit 100 includes an input or output pad 101 and an internal circuit 102, a conductor 103 is electrically connected between the input or output pad 101 and the internal circuit 102, and the internal circuit 102 is electrically connected to V SS power supply pin with V DD Between the power supply pins, the P-type trigger point 105 of a P-STSCR element 104 is electrically connected to an ESD detection circuit 106, and the anode (anode) 107 and cathode (cathode) 108 of the P-STSCR element 104 are respectively electrically connected to input or output pad 101 and V SS Power pin.

[0087] P-STSCR 104 includes a P-type substrate, an N well (N-well) is set in the P-type substrate, a first N + diffusion region as well as a first ...

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PUM

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Abstract

An electro-static discharge (ESD) protective circuit uses a matrix to trigger a silicon-controlled rectifier includes a first ESD detecting circuit electrically connected between an I / O bumper and Vss power supply connection foot, a P-type silicon-controlled rectifier of matrix trigger including a first lateral SCR and a P type triggering point as its positive and negative electrode electrically connected with I / O dumper and Vss power connection foot separately, a second ESD detecting circuit electrically connected in between the I / O bumper and the VDD power supply connection foot, and a N type silicon-controlled rectified (N-STSCR) with matrix trigger including a second lateral SCR and a N type triggering point as its positive and negative electrode electrically connected with I / O bumper and Vdd power supply connection foot separately.

Description

technical field [0001] The present invention relates to an electrostatic discharge protection circuit (electrostatic discharge protection circuit) and a power-rail ESD clamp circuit (power-rail ESD cl ampcircuits), in particular to a substrate that uses a substrate to trigger a silicon-controlled rectifier to discharge instantaneous high current of electrostatic discharge Trigger the ESD protection circuit of the silicon controlled rectifier. Background technique [0002] In order to provide effective electrostatic discharge protection capability of complementary metal oxide semiconductor integrated circuits (CMOS ICs), ESD protection circuits must be fabricated on input pads, output pads, and power pads of CMOS integrated circuits. around. When an ESD phenomenon occurs, since the SCR element has a low holding voltage (V hold , about 1 volt in the CMOS process), so the power consumption of SCR components (power = ESD current * hold voltage) will be less than that of other ...

Claims

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Application Information

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IPC IPC(8): H02H9/00H02H9/04H01L23/60H01L27/04H01L27/02
CPCH01L27/0262
Inventor 柯明道陈东旸唐天浩
Owner FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD