Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preventing charge generation of high voltage component machining process

A technology for process and high-voltage devices, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc. It can solve the problems of large leakage of isolation structure, inability to isolate, and low device turn-on voltage, and achieve high stability and device characteristics. Normal, stability-enhancing effects

Active Publication Date: 2009-06-17
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The consequence is that the turn-on voltage of the device is too low, and even cause depletion
In addition, the leakage of the isolation structure is very large (10 -6 A), so that it cannot play an effective isolation role
[0004] Existing N 2 , H 2 Annealing method is difficult to eliminate the impact of charge on high voltage devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preventing charge generation of high voltage component machining process
  • Method for preventing charge generation of high voltage component machining process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] Aiming at the impact of charges on high-voltage devices, the present invention adopts the method of ultraviolet drying to release charges, that is, to use ultraviolet light energy to recombine the charges generated in various manufacturing processes (the energy of ultraviolet rays can neutralize the charges generated in the oxide layer). A large number of electron-hole pairs), so as to achieve the effect of releasing charges.

[0014] see figure 1 , 2 As shown, the ultraviolet drying described in the present invention needs to be carried out after the subsequent metal connection and the passivation layer are etched, especially after the passivation layer is etched, the effect is the best. Then followed by polyimide coating process. In the existing process, the polyimide coating process is directly performed after the passivation layer is etched.

[0015] When the method of the present invention is used for specific implementation, it is necessary to select an ultravi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The method comprises: after the etching of passivation layer is completed, firstly using ultraviolet radiation to dry it, and then making the polyimide coating for it.

Description

technical field [0001] The invention relates to a manufacturing process method of a semiconductor integrated circuit, in particular to a method for preventing charge generation in the process process of a high-voltage device. Background technique [0002] In today's high-voltage devices, there will be a well with a very light concentration, so the concentration on the channel surface will also be very light. If a large amount of charge is generated during the process, it will cause a lot of mobile electrons to be generated on the surface of the high-voltage device, which will cause excessive leakage of the device and seriously cause the device to fail. [0003] The reason for the charge generation is related to the VUV (Vacuum Extreme Ultraviolet) effect. This VUV usually exists in some HDP, DRY... (high density plasma chemical vapor deposition and dry etching equipment) equipment. According to E=hc / λ, the energy of photons of different wavelengths can be obtained, and the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/268H01L21/3105H01L21/336
Inventor 陆涵蔚李建文李健刘春玲
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com