Method for preventing charge generation of high voltage component machining process

A technology for process and high-voltage devices, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc. It can solve the problems of large leakage of isolation structure, inability to isolate, and low device turn-on voltage, and achieve high stability and device characteristics. Normal, stability-enhancing effects

Active Publication Date: 2009-06-17
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The consequence is that the turn-on voltage of the device is too low, and even cause depletion
In addition, the leakage of the isolation structure is very large (10 -6 A), so that it cannot play an effective isolation role
[0004] Existing N 2 , H 2 Annealing method is difficult to eliminate the impact of charge on high voltage devices

Method used

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  • Method for preventing charge generation of high voltage component machining process
  • Method for preventing charge generation of high voltage component machining process

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Embodiment Construction

[0013] Aiming at the impact of charges on high-voltage devices, the present invention adopts the method of ultraviolet drying to release charges, that is, to use ultraviolet light energy to recombine the charges generated in various manufacturing processes (the energy of ultraviolet rays can neutralize the charges generated in the oxide layer). A large number of electron-hole pairs), so as to achieve the effect of releasing charges.

[0014] see figure 1 , 2 As shown, the ultraviolet drying described in the present invention needs to be carried out after the subsequent metal connection and the passivation layer are etched, especially after the passivation layer is etched, the effect is the best. Then followed by polyimide coating process. In the existing process, the polyimide coating process is directly performed after the passivation layer is etched.

[0015] When the method of the present invention is used for specific implementation, it is necessary to select an ultravi...

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Abstract

The method comprises: after the etching of passivation layer is completed, firstly using ultraviolet radiation to dry it, and then making the polyimide coating for it.

Description

technical field [0001] The invention relates to a manufacturing process method of a semiconductor integrated circuit, in particular to a method for preventing charge generation in the process process of a high-voltage device. Background technique [0002] In today's high-voltage devices, there will be a well with a very light concentration, so the concentration on the channel surface will also be very light. If a large amount of charge is generated during the process, it will cause a lot of mobile electrons to be generated on the surface of the high-voltage device, which will cause excessive leakage of the device and seriously cause the device to fail. [0003] The reason for the charge generation is related to the VUV (Vacuum Extreme Ultraviolet) effect. This VUV usually exists in some HDP, DRY... (high density plasma chemical vapor deposition and dry etching equipment) equipment. According to E=hc / λ, the energy of photons of different wavelengths can be obtained, and the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/268H01L21/3105H01L21/336
Inventor 陆涵蔚李建文李健刘春玲
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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