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Substrate processing apparatus

A substrate processing device and immersion processing technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of uneven etching rate of silicon nitride film and non-constant siloxane concentration, and achieve high precision Effect

Inactive Publication Date: 2009-07-08
DAINIPPON SCREEN MTG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the concentration of siloxane in the etching solution in the treatment tank is not constant, and the problem of uneven etching rate of the silicon nitride film occurs.

Method used

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Experimental program
Comparison scheme
Effect test

no. 1 approach

[0038] figure 1 It is an overall schematic configuration diagram of the first embodiment of the substrate processing apparatus of the present invention. This substrate processing apparatus 1 is a wet etching processing apparatus for selectively etching a silicon nitride film by immersing a substrate W formed with a silicon oxide film and a silicon nitride film in an aqueous phosphoric acid solution. The substrate processing apparatus 1 includes: a immersion treatment tank 10 for storing a phosphoric acid aqueous solution for etching; a circulation line 20 for circulating the phosphoric acid aqueous solution to the immersion treatment tank 10 ; and a regeneration line 30 for regenerating the phosphoric acid aqueous solution.

[0039]The immersion treatment tank 10 has a double-tank structure, and is composed of an inner tank 11 for storing a phosphoric acid aqueous solution as an etching solution and immersing the substrate W in the phosphoric acid aqueous solution, and an oute...

no. 2 approach

[0058] Next, a second embodiment of the present invention will be described. figure 2 It is an overall schematic configuration diagram of a substrate processing apparatus according to the second embodiment. exist figure 2 In , the same symbols are assigned to the same elements as those in the first embodiment. The substrate processing apparatus 1a of the second embodiment is also a wet etching processing apparatus for selectively etching the silicon nitride film by immersing the substrate W on which the silicon oxide film and the silicon nitride film are formed in an aqueous phosphoric acid solution. A immersion treatment tank 10 for storing a phosphoric acid aqueous solution for etching treatment; a circulation line 20 for circulating the phosphoric acid aqueous solution to the immersion treatment tank 10 ; and a regeneration line 30 for regenerating the phosphoric acid aqueous solution.

[0059] The structures of the immersion treatment tank 10 and the circulation line 2...

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Abstract

The present invention provides a substrate processing apparatus capable of maintaining a constant etching rate of a silicon nitride film formed on a substrate. The phosphoric acid aqueous solution stored in the immersion treatment tank (10) is circulated through the circulation line (20). The selective etching treatment of the silicon nitride film is performed by immersing the substrate (W) on which the silicon oxide film and the silicon nitride film are formed in an aqueous phosphoric acid solution in a immersion treatment tank (10). The regeneration line (30) takes out a part of the aqueous phosphoric acid solution circulated through the circulation line (20), and recovers and discharges the siloxane through the regeneration device (31) to regenerate the aqueous phosphoric acid solution. The control unit (40) controls the flow regulating valve (33) to adjust the flow rate of the phosphoric acid aqueous solution back to the immersion treatment tank (10) according to the measurement results of the outlet side concentration meter (24) and the inlet side concentration meter (32), so that The siloxane concentration contained in the aqueous phosphoric acid solution stored in the immersion treatment tank (10) is constant.

Description

technical field [0001] The present invention relates to a semiconductor wafer formed with a silicon oxide film and a silicon nitride film, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk, etc. (hereinafter referred to simply as "substrate") in phosphoric acid A substrate processing apparatus that selectively etches a silicon nitride film in an aqueous solution. Background technique [0002] In the manufacturing process of semiconductor devices, etching treatment is an important process for forming patterns. In particular, with the improvement in performance and high integration of semiconductor devices in recent years, it is required to form a silicon nitride film ( Si 3 N 4 film) and silicon oxide film (SiO 2 film), the silicon nitride film is selectively removed by etching while leaving the silicon oxide film. As a method of carrying out such a selective etching treatment of a silicon nitride fil...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/311
Inventor 清濑浩巳小林照幸
Owner DAINIPPON SCREEN MTG CO LTD