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Solid imaging device

A solid-state imaging device, pixel technology, applied in radiation control device, signal generator with a single pickup device, image communication, etc., can solve the problem of reducing the number of photoelectric conversion elements, storage time, storage time, etc. problem, to achieve high image quality, prevent the reduction of sensitivity, and achieve the effect of high practical value

Active Publication Date: 2009-07-08
GK BRIDGE 1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in conventional solid-state imaging devices, memories for storing pixel signals are connected in parallel, and pixel mixing is performed by averaging. Therefore, the pixel signals are not added together, but the average value of the pixel signals is output.
Here, in the case of the still image mode, since each photoelectric conversion element is read separately, the storage time is long and the amount of light is large, resulting in a high output signal, but in the case of the moving image mode, since the The signal of the photoelectric conversion element is mixed at a high speed in units, so the number of photoelectric conversion elements with practical effects becomes smaller, and in practice, the storage time becomes shorter
Therefore, in the conventional solid-state imaging device, the amount of light decreases and the output signal value is not added, so the output signal value decreases in proportion to the shortened storage time, resulting in a decrease in sensitivity

Method used

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Experimental program
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Embodiment approach 1

[0060] figure 2 It is a schematic diagram showing the circuit configuration of the solid-state imaging device according to the first embodiment. In addition, the example shown in the figure shows a case where there are two pixel portions (photoelectric conversion elements) arranged in the row direction.

[0061] Such as figure 2 As shown, the solid-state imaging device 1 includes: pixel portions 11a and 11b; a plurality of MOS transistors Q1a, Q1b, Q2a, Q2b, Q3a, Q3b, Q4a, Q4b, Q5a, Q5b, Q6a, Q6b, Q7, Q8a, Q8b, Q9a , Q9b; multiple capacitors C1a, C1b, C2a, C2b; line scanning circuit section 12; driving pulse application terminals P1, P2, P3, P4, P5, P6, P7, P8, the driving pulse application terminal is applied from the figure Drive pulses for the column scanning circuit section or signal readout circuit section not shown; bias voltage application terminals P11 and P12 to which the bias voltage from the column scanning circuit section or signal readout circuit section is applied...

Embodiment approach 2

[0097] Next, another solid-state imaging device according to the present invention will be described.

[0098] Figure 7 It is a circuit diagram showing the structure of the solid-state imaging device shown in the second embodiment. Here, as described above, in the solid-state imaging device 1, the signal value output to the signal output line L1 is divided by the capacitor C9, so there is loss.

[0099] Therefore, in the solid-state imaging device 2 according to the second embodiment, as Figure 7 As shown, in addition to the structure of the solid-state imaging device 1, it also includes a high input impedance circuit 13, which is connected between the source of the MOS transistor Q4b and the drain of the MOS transistor Q7.

[0100] As a result, the signal value output to the signal output line L1 is not divided by the capacitor C9, but has two Figure 7 In the case of the storage circuit of the structure, the signal value is 2×Vt, and in the case of N storage circuits, the sig...

Embodiment approach 3

[0107] Next, another solid-state imaging device of the present invention will be described.

[0108] Picture 9 It is a circuit diagram showing the configuration of the solid-state imaging device according to the third embodiment. Such as Picture 9 As shown, the solid-state imaging device 3 is applicable when two pixel units (photoelectric conversion elements) are arranged in the column direction. The solid-state imaging device 3 includes: pixel units 30a and 30b; MOS transistors Q1, Q2, Q6, Q11a, Q11b, Q12a, Q12b, Q13a, and Q13b; capacitors C1, C3a, C3b; buffer 31; row scan circuit section 32; drive pulse application terminals P21, P22, P23a, P23b, P24a, P24b, and P25; bias application terminals P31 and P32; and signal output lines L2 and L3, etc.

[0109] The pixel sections 30a and 30b include a photoelectric conversion element, a charge transfer section, a charge-voltage conversion section, a voltage amplification section, and the like. Picture 9 In this, the detailed circui...

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PUM

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Abstract

The present invention provides a solid-state imaging device in which sensitivity is prevented from lowering even when signals of pixels are mixed. The solid-state imaging device 1 includes a plurality of pixel units 11 and 11b each of which has a photoelectric conversion element, and is capable of summing signals corresponding to respective outputs of the photoelectric conversion elements of the pixel units. The device includes: a plurality of capacitors C2a and C2b, each of which individually accumulates electric charges corresponding to a signal outputted from the associated photoelectric conversion element; and a plurality of MOS transistors Qa and Qb which are alternately connected with the associated capacitor C2a or C2b. By disconnecting the MOS transistor Qa or Qb, the electric charges of the signal outputted from each of the photoelectric conversion elements are accumulated in each associated capacitor C2a or C2b, and by conducting the MOS transistors Qa and Qb to sum the signals of the pixel units, the capacitors C2a and C2b are connected in series.

Description

Technical field [0001] The present invention relates to MOS-type solid-state imaging devices used in digital cameras and the like, and particularly relates to a technology effective for pixel addition (pixel addition). Background technique [0002] In recent years, the high-resolution imaging of solid-state imaging devices has become more and more obvious, and has grown to 5 million pixels. It is even possible to capture still images at the level of a silver salt camera, as well as to capture dynamic images. Here, since moving images are captured with hundreds of thousands of pixels, in order to effectively use the remaining photoelectric conversion elements, a method of pixel-mixing the signal of each photoelectric conversion element is usually adopted (for example, Patent Literature 1). [0003] figure 1 It is a schematic diagram showing the structure of a signal readout circuit of a conventional solid-state imaging device. Such as figure 1 As shown, the signal readout circu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/335H01L27/146H04N23/40H04N23/12H04N25/00H04N25/46
CPCH04N3/1562H04N25/46H04N25/76H04N25/42H04N25/78
Inventor 村田隆彦山口琢己春日繁孝
Owner GK BRIDGE 1