Method for sensing stability of acid tank and reaction tank

A technology of stability and reaction tank, applied in the field of detection, can solve problems such as uneven thickness, and achieve the effect of avoiding poor stability

Inactive Publication Date: 2009-07-15
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, today's semiconductor components are becoming more and more sophisticated, and these small uneven thicknesses will have a great impact, so how to quickly and accurately detect the stability of the acid tank is extremely important

Method used

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  • Method for sensing stability of acid tank and reaction tank
  • Method for sensing stability of acid tank and reaction tank
  • Method for sensing stability of acid tank and reaction tank

Examples

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no. 1 example

[0024] Such as figure 2 Shown is a diagram of the acid tank stability detection steps according to the first embodiment of the present invention. Please refer to figure 2 , first in step 200, a substrate is provided. Next, in step 201 , a polycrystalline layer is formed on the surface of the substrate, wherein the polycrystalline layer includes, for example, a polysilicon layer and a metal layer. Then in step 202, the substrate formed with the polycrystalline layer is placed in an acid tank to perform the reaction process, wherein the acid tank includes, for example, a phosphoric acid reaction tank. Then in step 203, the substrate is taken out. Then in step 204, the surface of the polycrystalline layer of the substrate is measured by using a surface damage detection machine, such as E500 manufactured by Thermo Wave Company, to determine the stability of the acid tank. The surface damage detection machine uses a light source to shine on the surface of the polycrystalline ...

no. 2 example

[0026] Such as image 3 Shown is a step diagram of detecting the stability of the reaction tank according to the second embodiment of the present invention. This embodiment is suitable for detecting the stability of a reaction tank with a reaction solution during a reaction process, wherein the reaction process is assumed to be performed on a first material layer, and the first material layer includes, for example, a silicon nitride layer. Please refer to image 3 Firstly, in step 300, a substrate is provided, and the substrate can be used as a test piece for detecting the stability of the reaction tank during the reaction process. Then in step 301, a second material layer is formed on the surface of the substrate, wherein the second material layer includes, for example, a polysilicon layer or a metal layer, and the degree of influence of the second material layer by the reaction solution is greater than that of the first material layer by the reaction solution. Big. Then i...

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Abstract

A detection method for the stability of an acid tank and a reaction tank. Among them, the detection method of the stability of the acid tank is to provide a base first, and then form a polycrystalline layer on the base surface. Then, the substrate formed with the polycrystalline layer is placed in an acid tank to carry out a reaction process. Then the substrate is taken out, and the surface of the polycrystalline layer of the substrate is measured by using a surface damage detection machine to determine the stability of the acid bath. This method utilizes the characteristic of fast reaction at the grain boundary of the polycrystalline layer. Through the surface damage detection machine, it can directly and quickly know whether the surface structure of the polycrystalline layer is damaged due to poor stability of the acid bath.

Description

technical field [0001] The invention relates to a detection method, and in particular to a detection method for the stability of an acid tank and a reaction tank. Background technique [0002] Silicon nitride (Si 3 N 4 ) is a common dielectric material in semiconductor manufacturing. Its main application is as silicon dioxide (SiO 2 ) layer etching mask (Mask), and by virtue of the advantage that silicon nitride is not easy to be permeated by oxygen, this layer of silicon nitride mask can also be used as a field oxide layer (FieldOxide) to prevent active chip surface Area (Active Area) suffers from oxidation of the mask layer. In addition to the applications mentioned above, silicon nitride can also be used as a protective layer for semiconductor components after the main process has been completed. [0003] The aforementioned silicon nitride can be stripped using hot phosphoric acid. figure 1 It is a schematic cross-sectional view of a known phosphoric acid tank. Ple...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N33/00H01L21/66
Inventor 张原勋黄良田吕志原许哲恺林依亮
Owner MACRONIX INT CO LTD
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