Making method for memory capacitor

Abstract

A method for fabricating a storage capacitor includes that a semiconductor substrate provided with a device layer is deposited with an insulating layer and etched to form a connecting hole; a first polar plate is formed on the insulating layer; the rapid thermal annealing and oxidizing treatment is performed on the first polar plate; a dielectric layer is formed on the first polar plate; a second polar plate is formed on the dielectric layer. The method can increase the consistency when different polar voltages are sequentially exerted on the two sides of the capacitor, and prevent the damage on the capacitor polar plate caused by cleaning in the process of fabricating.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a storage capacitor. Background technique [0002] DRAM is a storage device widely used in electronics, communication and other fields. A dynamic memory storage unit generally includes a storage capacitor and a MOS transistor. The increase of its storage density needs to integrate more storage units per unit area and store more information per unit storage unit. Integrating more memory cells per unit area requires continuous reduction in device size, which depends on the development and progress of photolithography technology. Now 193nm exposure technology has begun to be used in production, and 157nm and immersion exposure technology has also been developed. Come out; the amount of information stored in a unit storage unit is determined by the capacity of the storage capacitor, and increasing the surface area of ​​the capacitor pl...

AI Technical Summary

Problems solved by technology

[0006] Using HSG to replace flat polysilicon (Flat poly) as the semiconductor plate in MIS improves the capacity of the capacitor, but it is a big challenge for D / R

Images