An ultra-large power semiconductor array cavity distortion sensing and detection compensation technology

Abstract

The invention provides a structural design method for a super-high-power two-dimensional semiconductor array phase-locked area sensing compensation mode-stabilizing system serving for the ultra-high-power semiconductor array to stably select the same phase mode, and provides the construction method of the detection subsystem and the compensation subsystem The method includes constructing a two-way detection subsystem and a compensation subsystem, the construction and operation method of the corresponding detection subsystem related to CCD1 and the compensation subsystem related to the end position of the external cavity mirror, the detection subsystem related to CCD2 and the R2 .2 Construction and operation methods of the relevant compensation subsystems; on the basis of each detection subsystem detecting a directional deformation parameter, jointly and collaboratively optimize the method of obtaining the compensation amount of the external cavity deformation, and the corresponding method of compensating the deformation of the external cavity mirror way method. By constructing the detection subsystem and compensation subsystem that adapt to the turning structure of the external cavity, the operating area sensing compensation phase-locked mode stabilization technology can realize timely compensation for the random deformation of the external cavity mirror caused by residual thermal effects, so that the external cavity with a tilt matching angle The mirror phase-locked ultra-high-power two-dimensional semiconductor array oscillates stably in the same phase mode, ensuring the high quality of the stable output of the array.

Description

technical field [0001] The invention belongs to the external cavity deformation sensing technology and compensation technology for the stable selection of the same phase mode of the ultra-high-power semiconductor array, relates to the phase-locking of the external cavity of the ultra-high-power semiconductor array, and relates to the selection of the array through the external cavity mirror deflecting and adapting the angle After the in-phase mode vibration, the automatic measurement method and automatic measurement system framework for the deformation of the external cavity caused by the residual thermal effect, etc., involve the compensation method and method for compensating the deformation of the external cavity of the array, and the compensation system structure for compensating the deformation of the external cavity of the array, involving avoiding Cavity deformation leads to non-in-phase mode onset. Background technique [0002] The quantum efficiency of the semicondu...

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Problems solved by technology

[0005] Using the working center wavelength as λ, the slow axis array period as d, and the cavity length as L C = d 2 / 2λ, the 1 / 4Talbot external cavity mirror technology whose normal direction of the external cavity mirror is perpendicular to the slow axis can successfully lock the phase of the high-power semiconductor array, but the corresponding far-field distribution is a double-lobe structure, indicating that the corresponding oscillation mode is out-of-phase mode; According to the law of fractional Talbot cavity field distribution, in order to make the system oscillate in the same phase mode, to obtain an excellent output with far field distribution as a single lobe structure and close to the diffraction limit, the 1 / 4 Talbot external cavity mirror must be properly deflected in the direction of the slow axis From a certain point of view, this is the way that the two-dimensional semiconductor stacked array uses the external cavity technology to select the same phase mode oscillation, which has been successfully realized in engineering. However, when this technology is applied to the ultra-high-power two-dimensional semiconductor array phase-locked, in After the external cavity mirror with tilted adaptation angle makes the array select the same-phase mode vibration, although the cooling subsystem can ensure the continuous operation of the array, the residual thermal effect will still make the deformation of the external cavity continue to increase, coupled with platform vibration, etc., resulting in out-of-phase mode shock

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