An obtainment technology for external cavity distortion compensation and half compensation of ultra-high power semiconductor array

Abstract

The utility model provides an acquiring technology of compensation quantity needed by compensating deformation to avoid reducing the phase lock quality and prevents external cavity deformation from affecting the phase lock quality in an ultra-high-power semiconductor array. A subsystem measuring the external cavity deformation related to CCD1 utilizes a reflector R 2.1, a reflector 3, a zoom optical device 1 and a lens 1, focalizes on half of He-Ne laser beam reflected by the external cavity and forms images on CCD1. Facula centric and change quality after demarcation are calculated by a processor 1 to obtain the deformation information in a direction of the external cavity mirror. When the deformation information arrives at the threshold, the compensation quantity is acquired through a full compensation quantity acquiring method and then the compensation quantity combining with the corresponding D / A and the corresponding high-voltage driving module drives the corresponding piezoelectricity compensator PZT arranged on the end of the external cavity mirror to expand and compensate, so as to compensate drifting of Beta in a direction. A subsystem measuring the external cavity deformation concerning CCD2 uses a reflector R 2.2, a reflector 3, a zoom optical device 2 and lens 2, focalizes on the other half of He-Ne laser beam reflected by the external cavity and dorms images on CCD2. Facula centric and change quality after demarcation are calculated by a processor 2. The following procedures are same with CCD1. Consequently, the random deformation of the external cavity mirror caused by residual heat effect is compensated at real time and the ultra-high-power two-dimensional semiconductor array of the phase lock of the external cavity mirror adopting inclined matching angle steadily vibrates in the same phase module, thus guaranteeing high quality and steady output of the arrays.

Description

technical field [0001] The invention belongs to the stabilization technology for phase-locked operation of ultra-high-power semiconductor arrays, and relates to the method of adapting angles due to external cavity deformation caused by residual thermal effects and the like after ultra-high-power semiconductor arrays are deflected and oscillated by an external cavity mirror that adapts to an angle. The deviation involves preventing the vibration of the non-basic supermode related to the deformation of the external cavity, involving the measurement of the deformation of the external cavity and obtaining the compensation amount, and involving ensuring that the array oscillates stably and operates in the basic supermode. Background technique [0002] The quantum efficiency of the semiconductor array is high, the output wavelength range covers 570nm to 1600nm, and the working life can reach millions of hours. The stacked array can provide ultra-high power laser output, and has a v...

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Problems solved by technology

[0005] Using the working center wavelength as λ, the slow axis array period as d, and the cavity length as L c = d 2 / 2λ, the 1 / 4Talbot external cavity mirror technology whose normal direction of the external cavity mirror is perpendicular to the slow axis can successfully lock the phase of the high-power semiconductor array, but the corresponding far-field distribution is a double lobe structure, indicating that the corresponding oscillation mode is the highest order super mode; according to the distribution law of the fractional Talbot cavity field, in order to make the system oscillate in the fundamental supermode, to obtain an excellent output with a single lobe structure and close to the diffraction limit in the far field, the 1 / 4 Talbot external cavity mirror must be placed in the direction of the slow axis Appropriately deflecting at a certain angle, this is the way that the two-dimensional semiconductor stacked array adopts the external cavity technology to select the base supermode oscillation, and has successfully obtained engineering realization. However, when this technology is applied to the ultra-high-power two-dimensional semiconductor array lock At the same time, after tilting the outer cavity mirror with an adapted angle to make the array selection base supermode oscillate, although the cooling subsystem can ensure the continuous operation of the array, the residual thermal effect will still make the deformation of the outer cavity continue to aggravate, coupled with the vibration of the platform etc., resulting in the highest-order supermodel shock

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