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Light-emitting device forming method and semiconductor light-emitting device

A light-emitting device and semiconductor technology, which is applied in the field of light-emitting technology, can solve the problems of increasing material costs, reducing nano-crystals, and poor performance of CMOS devices, and achieves improvements in hole mobility, increased deposition efficiency, and easy process methods Effect

Active Publication Date: 2009-10-14
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, conventional processing methods result in relatively poor gate dielectric interface, which reduces the likelihood of ideal implantation of nanocrystals into the dielectric layer on the silicon surface
The performance of CMOS devices also suffers from poor hole mobility
Since a thick dielectric layer 102 is used in the traditional process method, it will inevitably increase the cost of materials

Method used

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  • Light-emitting device forming method and semiconductor light-emitting device
  • Light-emitting device forming method and semiconductor light-emitting device
  • Light-emitting device forming method and semiconductor light-emitting device

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Embodiment Construction

[0029] In order to make the above-mentioned purposes, features and advantages of the present invention more obvious and understandable, a preferred embodiment is specifically cited below, and in conjunction with the accompanying drawings, the detailed description is as follows:

[0030] The present invention provides many manufacturing methods of the light emitting device. In this way, the light emitting device and the control circuit device can be arranged on the same substrate.

[0031] Figure 2A Is a cross-sectional view 200 showing a light-emitting device having nanocrystals doped in its dielectric layer according to an embodiment of the present invention, including a porous or low-density oxide layer. In this embodiment, the porous or low density oxide is disposed in shallow trench isolation (STI) in the silicon substrate.

[0032] In cross-sectional view 200 , STI region 202 is formed in silicon substrate 204 . The shallow trench isolation region 202 as a dielectric l...

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Abstract

A semiconductor light emitting device and a method to form the same are disclosed. The device has at least one porous or low density dielectric region formed in or on top of a bottom electrode, at least one top electrode on the porous or low density dielectric region, and one or more color filters placed above the top electrode, wherein the porous or low density dielectric region contains light emitting nanocrystal materials.

Description

technical field [0001] The present invention relates to an integrated circuit design, in particular to a light-emitting technology that is arranged on the same substrate as a control circuit device. Background technique [0002] Light emitting (light emitting) technology is an industry that has made rapid progress in recent years. Light-emitting technology is used to reduce the size of products (such as computer monitors) by proposing new products (such as liquid crystal displays). [0003] A conventional method currently used to fabricate light-emitting devices is to inject some ultra-fine particles, equivalent to nanocrystals, into a thick dielectric layer on a silicon surface. These nanocrystals can be made of materials such as silicon (Si), germanium (Ge), or a compound of silicon and germanium (germanium silicide, SiGe). The dielectric layer is made of silicon dioxide (SiO 2 ), silicon dioxide has proven to be a material that can be used to control the process. [0...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
CPCH05B33/10
Inventor 黄健朝杨富量
Owner TAIWAN SEMICON MFG CO LTD