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Integrated power amplifier circuit and method

A power amplifier, circuit technology, applied in power amplifiers, amplifiers, improving amplifiers to reduce temperature/supply voltage changes, etc., can solve problems such as occupation, reduced work efficiency, difficult calibration requirements, etc.

Active Publication Date: 2009-10-21
SIGE SEMICON U S
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In addition, the various existing control structures all occupy a large die area and utilize multiple integrated circuit technologies, which have a high net production cost and the associated die area is also large
Due to the need for direct connection to the circuit, this traditional approach often results in lower productivity and less repeatable results, creating more difficult calibration requirements and reducing yield

Method used

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  • Integrated power amplifier circuit and method
  • Integrated power amplifier circuit and method
  • Integrated power amplifier circuit and method

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Embodiment Construction

[0024] figure 1 A prior art power amplifier (PA) integrated circuit (IC) (PAIC) 101, comparator circuit 102, and RF power detection circuit 103 are shown in FIG. The PAIC 101 has an input port 101a for receiving an RF input signal, an output port 101b for providing an RF output signal, a supply voltage input port 101d for receiving a supply voltage, and a control port 101c for receiving a control signal. The PAIC 101 is provided with a first amplifier stage 121 , a second amplifier stage 122 and a third amplifier stage 123 . Each amplification stage comprises a transistor whose base terminal is connected via a capacitor to one of the input ports and to the collector terminal of the preceding amplification stage. Capacitor 131 is used to connect the RF input signal to the first amplifier stage, and capacitors 132, 133 are used to connect the amplifier stages together. In addition, the first amplifying stage 121 is provided with a first current source 111 , the second amplifyi...

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PUM

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Abstract

According to the first embodiment of the present invention, there is provided a three-stage power amplifier integrated circuit with a dual feedback low-power voltage regulation circuit. According to a second embodiment of the present invention, a current source feedback circuit with low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided. According to a third embodiment of the present invention, there is provided a detector circuit in the form of an integrated logarithmic current detector circuit combined with a three-stage power amplifier integrated circuit. Three embodiments of the present invention advantageously overcome the limitations of the prior art.

Description

technical field [0001] The present invention relates to the field of amplifier circuits, and more particularly, to integrated power amplifier circuits. Background technique [0002] Typical power amplifier (PA) technology utilizes multiple integrated circuits to provide amplification, power output control, and stabilize PA output signal level fluctuations due to power supply voltage and temperature fluctuations. [0003] Those skilled in the art of amplifier design know that the bias current provided to the RF signal amplification stage is an important factor determining the performance of the amplification stage. For example, the bias current supplied to the base of a bipolar transistor as an RF signal amplification stage is a major determinant of the bipolar transistor's amplification performance. Selecting and providing the correct bias current is critical to optimizing the RF signal amplification characteristics of any transistor amplifier. Furthermore, it will be appr...

Claims

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Application Information

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IPC IPC(8): H03F1/30H03F1/02H03G3/20H03G3/30H03F3/21H03F3/347H03G1/00H03G3/00
CPCH03F3/211H03G3/004H03G1/0017H03F2200/504H03F3/347H03F1/0261H03F2200/99H03G3/3042H03F3/20H03F3/343H03F3/21
Inventor 马克·多尔蒂约翰·吉利斯米歇尔·麦克帕特林戴维·赫尔姆斯菲利普·安东涅蒂
Owner SIGE SEMICON U S