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Making method for the storage of charge component

A manufacturing method and component technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of increasing surface area and difficulty, and achieve the effects of increasing storage capacity, saving costs, and simple process

Inactive Publication Date: 2009-12-02
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Using metals as electrodes has the advantage of lower dielectric reactivity, but it is not easy to increase the surface area for metal electrodes

Method used

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  • Making method for the storage of charge component
  • Making method for the storage of charge component
  • Making method for the storage of charge component

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] Figures 1A to 1F It is a sectional view of the manufacturing process of the charge storage element of the present invention. figure 2 is the thickness of the gradient material layer versus Hf x Si y O zDiagram of the relationship between the silicon ratio and the thickness of the graded material layer versus the etch rate.

[0042] Please refer to Figure 1A , first provide a substrate 100 . The substrate 100 is, for example, a silicon substrate (for simplicity, the components in the substrate 100 are not shown). Then, an insulating layer 102 and a top cover layer 104 are formed on the substrate 100 . The material of the insulating layer 102 is, for example, silicon oxide. The method for forming the insulating layer 102 is, for example, tetra-ethyl-ortho-silicate (Tetra-Ethyl-Ortho-Silicate, TEOS) / ozone (O 3 ) as a gas source, formed by plasma enhanced chemical vapor deposition (PlasmaEnhanced Chemical Vapor Deposition, PECVD). Certainly, the material of the i...

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Abstract

A method for manufacturing a charge storage element, using the atomic layer deposition method to precisely control the characteristics of film growth thickness and silicon content, in the process of depositing hafnium silicon oxide HfxSiyOz, the silicon content is gradually changed, so it is easy to produce stacked Gradient material layer. Then, utilizing the property that the silicon content y affects the etch rate of hafnium silicon oxide HfxSiyOz by the hydrofluoric acid solution, the profile of the side wall of the stacked graded material layer etched by the diluted hydrofluoric acid solution presents an irregular shape. Since the lower electrode, the capacitor dielectric layer, and the upper electrode are formed on the sidewalls of the irregular stacked insulating layer, the area between the lower electrode and the upper electrode can be increased, and the storage charge can be improved. Component storage capacity.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor element, and in particular to a manufacturing method of a charge storage element. Background technique [0002] When the semiconductor enters the Deep Sub-Micron process, the size of the device gradually shrinks. For the previous DRAM structure, it means that the space for the capacitor is getting smaller and smaller. On the other hand, due to the gradual increase of computer application software, the required memory capacity is also increasing. For this situation where the size is reduced but the memory capacity needs to be increased, it shows that the capacitor of the previous dynamic random access memory The manufacturing method must be changed to meet the trend. [0003] In general, there are many ways to increase the capacity of the capacitor to store charges, such as increasing the area of ​​the capacitor or using a capacitor dielectric layer with a high dielectric constant to in...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/8242H01L21/8222H10B12/00
Inventor 梁虔硕曾培哲李亨元李隆盛
Owner IND TECH RES INST