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Method of cleaning chamber with silicon chip erosion

A technology for etching cavity and silicon wafer, which is applied in the maintenance field of semiconductor silicon wafer processing equipment, and can solve problems such as reducing equipment productivity.

Active Publication Date: 2009-12-23
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, wet cleaning needs to open the upper cover of the etching chamber for operation, which reduces equipment productivity

Method used

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Examples

Experimental program
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Effect test

Embodiment Construction

[0019] The method for cleaning the silicon wafer etching chamber of the present invention is mainly used for cleaning the silicon wafer etching by-products and particles in the silicon wafer etching chamber, and its preferred specific implementation method includes:

[0020] Step 1, passing fluorine-containing gas and oxygen into the etching chamber, and performing a cleaning process on the etching chamber;

[0021] Step 2, introducing chlorine gas and oxygen into the etching chamber, and performing a cleaning process on the etching chamber.

[0022] The etching chamber is equipped with an upper radio frequency source and a lower radio frequency source, wherein the function of the upper radio frequency source is to ionize the process gas into plasma, and the function of the lower radio frequency source is to control the plasma to realize the etching or Other process operations.

[0023] During the cleaning process, there is no need to control the plasma, so it is only necessa...

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PUM

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Abstract

The invention discloses a method for cleaning silicon etching cavity. Firstly, fluorine-containing gas and oxygen are led into an etching cavity to clean the etching by-products and granules containing silicon in the etching cavity; secondly, chorine and oxygen are led into the etching cavity to clean the etching by-products and granules containing carbon. The fluorine-containing gas essentially comprises SF6 and NF3. The invention can effectively clear away the silicon by-products and granules in the etching cavity and is mainly used for cleaning etching cavity of semiconductor silicon processing equipment.

Description

technical field [0001] The invention relates to a maintenance method for semiconductor silicon wafer processing equipment, in particular to a cleaning method for a silicon wafer etching chamber. Background technique [0002] Plasma etching of semiconductor silicon wafers is one of the key processes in integrated circuit manufacturing. Its purpose is to completely copy the mask pattern to the surface of semiconductor silicon wafers. Plasma etching has good selectivity and less damage to the substrate. , good anisotropy and other characteristics, the principle of plasma etching of silicon wafers is: [0003] Under low pressure, the process gas is excited by radio frequency power to generate ionization and form plasma. Plasma is composed of charged electrons and ions. The process gas in the etching chamber is impacted by electrons, except for transforming into ions. , can also absorb energy and form a large number of active groups; the active reactive groups form a chemical re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B08B7/00H01L21/00
Inventor 付春江
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD