Method of cleaning chamber with silicon chip erosion

Abstract

The invention discloses a method for cleaning silicon etching cavity. Firstly, fluorine-containing gas and oxygen are led into an etching cavity to clean the etching by-products and granules containing silicon in the etching cavity; secondly, chorine and oxygen are led into the etching cavity to clean the etching by-products and granules containing carbon. The fluorine-containing gas essentially comprises SF6 and NF3. The invention can effectively clear away the silicon by-products and granules in the etching cavity and is mainly used for cleaning etching cavity of semiconductor silicon processing equipment.

Description

technical field [0001] The invention relates to a maintenance method for semiconductor silicon wafer processing equipment, in particular to a cleaning method for a silicon wafer etching chamber. Background technique [0002] Plasma etching of semiconductor silicon wafers is one of the key processes in integrated circuit manufacturing. Its purpose is to completely copy the mask pattern to the surface of semiconductor silicon wafers. Plasma etching has good selectivity and less damage to the substrate. , good anisotropy and other characteristics, the principle of plasma etching of silicon wafers is: [0003] Under low pressure, the process gas is excited by radio frequency power to generate ionization and form plasma. Plasma is composed of charged electrons and ions. The process gas in the etching chamber is impacted by electrons, except for transforming into ions. , can also absorb energy and form a large number of active groups; the active reactive groups form a chemical re...

AI Technical Summary

Problems solved by technology

However, wet cleaning needs to open the upper cover of the etching chamber for operation, which reduces equipment productivity